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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics
会议论文
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), Singapore, SINGAPORE, DEC 08-11, 2008
作者:
Wang, LS
;
Zhao, LJ
;
Pan, JQ
;
Zhang, W
;
Wang, H
;
Liang, S
;
Zhu, HL
;
Wang, W
;
Wang, LS, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(204Kb)
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  |  
浏览/下载:1591/343
  |  
提交时间:2010/03/09
P-i-n/hbt
Wave-guide
Inp/ingaas
Frequency
Hbt
Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE
会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:
Feng, W (Feng, W.)
;
Pan, JQ (Pan, J. Q.)
;
Zhou, F (Zhou, F.)
;
Zhao, LJ (Zhao, L. J.)
;
Zhu, HL (Zhu, H. L.)
;
Wang, W (Wang, W.)
;
Feng, W, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(417Kb)
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  |  
浏览/下载:1358/295
  |  
提交时间:2010/03/29
Buried-heterostructure Lasers
Bandgap Energy Control
Vapor-phase Epitaxy
Pressure Movpe
Converter
Electron irradiation-induced defects in InP pre-annealed at high temperature
会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:
Zhao, YW (Zhao, Y. W.)
;
Dong, ZY (Dong, Z. Y.)
;
Deng, AH (Deng, A. H.)
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(147Kb)
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浏览/下载:1301/254
  |  
提交时间:2010/03/29
Indium Phosphide
Wavelength-selectable DFB laser with wide gain bandwidth realized in nonidentical quantum well - art. no. 60200W
会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:
Xie, HY
;
Pan, JQ
;
Yang, H
;
Zhao, LJ
;
Zhu, HL
;
Wang, LF
;
Cui, AH
;
Wang, W
;
Xie, HY, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China.
Adobe PDF(163Kb)
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  |  
浏览/下载:1721/404
  |  
提交时间:2010/03/29
Wide Gain Bandwidth
Dfb Laser
Non-identical Quantum Well
Cwdm
Superluminescent Diodes
Design and Fabrication of Low-microwave loss Coplannar Waveguide and precise V groove on Silicon Substrate for Optoelectronic Packaging - art. no. 601938
会议论文
Passive Components and Fiber-based Devices II丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:
Yang, H
;
Zhu, HL
;
Xie, HY
;
Zhao, LJ
;
Zhou, F
;
Wang, W
;
Yang, H, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China.
Adobe PDF(302Kb)
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收藏
  |  
浏览/下载:1897/315
  |  
提交时间:2010/03/29
Coplanar Waveguide (Cpw)
v Groove
Low Microwave Loss
Passive Coupling
Optoelectronic Packaging
Design of high brightness cubic-GaN LEDs grown on GaAs substrate
会议论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, SEOUL, SOUTH KOREA, AUG 20-23, 2002
作者:
Sun YP
;
Shen XM
;
Zhang ZH
;
Zhao DG
;
Feng ZH
;
Fu Y
;
Zhang SN
;
Yang H
;
Sun YP Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(172Kb)
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收藏
  |  
浏览/下载:1416/260
  |  
提交时间:2010/11/15
Wafer Bunding
Cubic Gan
Light-emitting-diodes
Field-effect Transistor
Single-crystal Gan
Microwave Performance
Mirror
Junction
Ti Schottky barrier diodes on n-type 6H-SiC
会议论文
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, SHANGHAI, PEOPLES R CHINA, OCT 22-25, 2001
作者:
Liu ZL
;
Wang SR
;
Yu F
;
Zhang YG
;
Zhao H
;
Liu ZL Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(214Kb)
  |  
收藏
  |  
浏览/下载:1674/581
  |  
提交时间:2010/10/29
Semiconductor
MOCVD growth of cubic GaN: Materials and devices
会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:
Yang H
;
Zhang SM
;
Xu DP
;
Li SF
;
Zhao DG
;
Fu Y
;
Sun YP
;
Feng ZH
;
Zheng LX
;
Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(380Kb)
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  |  
浏览/下载:1656/238
  |  
提交时间:2010/10/29
Mocvd
Gan
Ingan
Cubic
Led
Chemical-vapor-deposition
Molecular-beam Epitaxy
Gallium Nitride
Phase Epitaxy
Ingan Films
Electroluminescence
Zincblende
Wurtzite
Mbe
Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition
会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:
Xu DP
;
Yang H
;
Li JB
;
Li SF
;
Zhao DG
;
Wang YT
;
Sun XL
;
Wu RH
;
Xu DP Chinese Acad Sci Natl Res Ctr Optoelect Technol Inst Semicond Beijing 100864 Peoples R China.
Adobe PDF(194Kb)
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收藏
  |  
浏览/下载:1276/252
  |  
提交时间:2010/11/15
Cubic Gan
Buffer Layer
Atomic Force Microscopy
Reflection High-energy Electron Diffraction
Movpe
Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers
会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:
Peng CS
;
Chen H
;
Zhao ZY
;
Li JH
;
Dai DY
;
Huang Q
;
Zhou JM
;
Zhang YH
;
Tung CH
;
Sheng TT
;
Wang J
;
Peng CS Chinese Acad Sci Inst Phys POB 603 Beijing 100080 Peoples R China.
Adobe PDF(208Kb)
  |  
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  |  
浏览/下载:1618/311
  |  
提交时间:2010/11/15
Threading Dislocation
Si(100)
Layers
Films