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Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D 会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
作者:  Wang, L;  Zhao, LJ;  Chen, WX;  Pan, JQ;  Zhou, F;  Zhu, HL;  Wang, W;  Wang, L, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(737Kb)  |  收藏  |  浏览/下载：1673/408  |  提交时间：2010/03/09
Photonic Integrated Circuit  Y-branch  Superluminescent Diode  Bundle Integrated Guide  Far Field Pattern  Reactive Ion Etching  
A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics 会议论文
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), Singapore, SINGAPORE, DEC 08-11, 2008
作者:  Wang, LS;  Zhao, LJ;  Pan, JQ;  Zhang, W;  Wang, H;  Liang, S;  Zhu, HL;  Wang, W;  Wang, LS, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(204Kb)  |  收藏  |  浏览/下载：1493/343  |  提交时间：2010/03/09
P-i-n/hbt  Wave-guide  Inp/ingaas  Frequency  Hbt  
High efficiency, low vertical divergence angle 980nnn Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers 会议论文
IN-PLANE SEMICONDUCTOR LASERS IV, 3947, SAN JOSE, CA, JAN 24-25, 2000
作者:  Xiu ZT;  Zhang JM;  Ma XY;  Yang GW;  Shen GD;  Chen LH;  Xiu ZT Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(175Kb)  |  收藏  |  浏览/下载：1733/403  |  提交时间：2010/10/29
Sqw Lasers  Ingaasp  Power  Fiber  Nm  
High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Chen LH;  Xu ZT;  Ma XY;  Zhang JM;  Yang GW;  Xu JY;  Chen LH Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(271Kb)  |  收藏  |  浏览/下载：1234/283  |  提交时间：2010/11/15
High Power  Al-free Laser  Communication  Epitaxy  
A model of dislocations at the interface of the bonded wafers 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Han WH;  Yu JZ;  Wang LC;  Wei HZ;  Zhang XF;  Wang QM;  Han WH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(76Kb)  |  收藏  |  浏览/下载：1582/266  |  提交时间：2010/10/29
Wafer Bonding  Heteroepitaxy  Lattice Mismatch  Edge-like Dislocations  Thermal Stress  60 Degrees Dislocation Lines  Gaas  
InP-based optoelectronic devices for optical fiber communications 会议论文
CZECHOSLOVAK JOURNAL OF PHYSICS, 49 (5), PRAGUE, CZECH REPUBLIC, JUN 15-17, 1998
作者:  Luo Y;  Chen LH;  Li TN;  Luo Y Tsing Hua Univ Dept Elect Engn State Key Lab Integrated Optoelect Beijing 100084 Peoples R China.
Adobe PDF(265Kb)  |  收藏  |  浏览/下载：1182/346  |  提交时间：2010/11/15
Feedback Semiconductor-lasers  
High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Wang ZM;  Wang LM;  He GP;  Yang YL;  Zhang HQ;  Zhou XN;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(189Kb)  |  收藏  |  浏览/下载：1232/273  |  提交时间：2010/10/29
Ingaasp  Strained Layer Quantum Well  Laser Diode  Mocvd  
Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Yang GW;  Xu ZT;  Xu JY;  Ma XY;  Zhang JM;  Chen LH;  Yang GW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(356Kb)  |  收藏  |  浏览/下载：1432/382  |  提交时间：2010/10/29
Strained Quantum Well  Semiconductor Lasers  
1.3 mu m InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Chen B;  Wang W;  Wang XJ;  Zhang JY;  Zhu HL;  Zhou F;  Chen B Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(162Kb)  |  收藏  |  浏览/下载：1279/248  |  提交时间：2010/10/29
1.3 Mu m  Complex-coupled Grating  Dfb Laser