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题名: Research on the band-gap of InN grown on siticon substrates
作者: Xiao, HL;  Wang, XL;  Wang, JX;  Zhang, NH;  Liu, HX;  Zeng, YP;  Li, JM
出版日期: 2006
会议日期: SEP 18-22, 2005
摘要: Photoluminescence (PL) and absorption experiments were carried out to examine the fundamental band-gap of InN films grown on silicon substrates. A strong PL peak at 0.78 eV was observed at room temperature, which is much lower than the commonly accepted value of 1.9 eV. The integrated PL intensity was found to depend linearly on the excitation laser intensity over a wide intensity range. These results strongly suggest that the observed PL is related to the emission of the fundamental inter-band transitions of InN rather than to deep defect or impurity levels. Due to the effect of band-filling with increasing free electron concentration, the absorption edge shifts to higher energy. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
会议名称: 32nd International Symposium on Compound Semiconductors
KOS主题词: atomic layer deposition;  Nitrides;  absorption;  Alloys;  Photography--Films;  Finite volume method
会议文集: Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS
专题: 中国科学院半导体研究所(2009年前)_会议论文

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Xiao, HL; Wang, XL; Wang, JX; Zhang, NH; Liu, HX; Zeng, YP; Li, JM .Research on the band-gap of InN grown on siticon substrates .见:WILEY-VCH, INC .Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS ,605 THIRD AVE, NEW YORK, NY 10158-0012 USA ,2006,Vol 3 no 3 3 (3): 594-597
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