Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
	Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM; Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
	2008
会议名称	34th International Symposium on Compound Semiconductors
会议录名称	PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS
页码	VOL 5,NO 9,5 (9): 2979-2981
会议日期	OCT 15-18, 2007
会议地点	Kyoto, JAPAN
出版地	PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
出版者	WILEY-V C H VERLAG GMBH
ISSN	1610-1634
部门归属	[wang, xinhua; wang, xiaoliang; xiao, hongling; feng, chun; wang, xiaoyan; wang, baozhu; yang, cuibai; wang, junxi; wang, cuimei; ran, junxue; hu, guoxin; li, jinmin] chinese acad sci, inst semicond, novel mat lab, beijing 100083, peoples r china
摘要	In this paper, platinum (Pt) with a thickness of 45 nm was sputtered on the surface of AlGaN/GaN heterostructure to form the Schottky contact and the back-to-back Schottky diodes were characterized for H-2 sensing at room temperature. Both the forward and reverse current of the devices increased with exposure to H-2 gas, which was attributed to Schottky barrier height reduction caused by hydrogen absorption in the catalytic metals. A shift of 0.7 V at 297 K was obtained at a fixed forward current of 0.1 mA after switching from N-2 to 40% H-2 in N-2. The sensor's responses under different concentrations from 2500 ppm H-2 to 40% H-2 in N-2 at 297 K were investigated. Time response of the sensor at a fixed bias of 1 V was given. Finally, the decrease of the Schottky barrier height and the sensitivity of the sensor were calculated. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
关键词	Gas Sensors Hemt Structures Mobility Temperature Transistors Growth Mocvd Layer
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7764
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Wang, XH,Wang, XL,Xiao, HL,et al. Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode[C]. PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY:WILEY-V C H VERLAG GMBH,2008:VOL 5,NO 9,5 (9): 2979-2981.

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