SEMI OpenIR  > 中科院半导体材料科学重点实验室
大尺寸非极性A面GaN自支撑衬底的制备方法
李辉杰; 杨少延; 魏鸿源; 赵桂娟; 汪连山; 李成明; 刘祥林; 王占国
Rights Holder中国科学院半导体所
Date Available2016-09-29
Country中国
Subtype发明
Subject Area半导体材料
Application Date2015-05-25
Application NumberCN201510270779.3
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27644
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
李辉杰,杨少延,魏鸿源,等. 大尺寸非极性A面GaN自支撑衬底的制备方法.
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