SEMI OpenIR  > 半导体超晶格国家重点实验室
一种高电阻温度系数氧化钒薄膜的制备方法
张立春; 王国伟; 张宇; 徐应强; 倪海桥; 牛智川
Rights Holder中国科学院半导体所
Date Available2016-09-28
Country中国
Subtype发明
Subject Area半导体物理
Application Date2015-01-21
Application NumberCN201510030113.0
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27606
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
张立春,王国伟,张宇,等. 一种高电阻温度系数氧化钒薄膜的制备方法.
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