InAs/GaSb超晶格红外光电探测器及其制备方法

	InAs/GaSb超晶格红外光电探测器及其制备方法
	蒋洞微; 向伟; 王娟; 邢军亮; 王国伟; 徐应强; 任正伟; 贺振宏; 牛智川
Rights Holder	中国科学院半导体研究所
Date Available	2014-06-25
Country	中国
Subtype	发明
Subject Area	半导体物理
Application Date	2014-04-16
Application Number	CN201410153659.0
Document Type	专利
Identifier	http://ir.semi.ac.cn/handle/172111/25720
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	蒋洞微,向伟,王娟,等. InAs/GaSb超晶格红外光电探测器及其制备方法.

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