Knowledge Management System Of Institute of Semiconductors,CAS
InAs/GaSb超晶格红外光电探测器及其制备方法 | |
蒋洞微; 向伟; 王娟; 邢军亮; 王国伟; 徐应强; 任正伟; 贺振宏; 牛智川 | |
Rights Holder | 中国科学院半导体研究所 |
Date Available | 2014-06-25 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 半导体物理 |
Application Date | 2014-04-16 |
Application Number | CN201410153659.0 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/25720 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | 蒋洞微,向伟,王娟,等. InAs/GaSb超晶格红外光电探测器及其制备方法. |
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File Name/Size | DocType | Version | Access | License | ||
InAs_GaSb超晶格红外光电探测器及(932KB) | 限制开放 | License | Application Full Text |
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