SEMI OpenIR  > 半导体超晶格国家重点实验室
InAs/GaSb超晶格红外光电探测器及其制备方法
蒋洞微; 向伟; 王娟; 邢军亮; 王国伟; 徐应强; 任正伟; 贺振宏; 牛智川
Rights Holder中国科学院半导体研究所
Date Available2014-06-25
Country中国
Subtype发明
Subject Area半导体物理
Application Date2014-04-16
Application NumberCN201410153659.0
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25720
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
蒋洞微,向伟,王娟,等. InAs/GaSb超晶格红外光电探测器及其制备方法.
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