SEMI OpenIR  > 半导体超晶格国家重点实验室
基于高折射率对比度光栅结构的单光子发射器及其制作方法
王莉娟; 喻颖; 査国伟; 徐建星; 倪海桥; 牛智川
Rights Holder中国科学院半导体研究所
Date Available2014-01-22
Country中国
Subtype发明
Subject Area半导体物理
Application Date2013-10-25
Application NumberCN201310509314.X
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25496
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
王莉娟,喻颖,査国伟,等. 基于高折射率对比度光栅结构的单光子发射器及其制作方法.
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