SEMI OpenIR  > 中科院半导体照明研发中心
制备氮化镓绿光发光二极管外延结构的方法
孙波; 赵丽霞; 伊晓燕; 刘志强; 魏学成; 王国宏
Rights Holder中国科学院半导体研究所
Date Available2012-08-01
Country中国
Subtype发明
Subject Area半导体器件
Application Date2012-03-31
Application NumberCN201210093564.5
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25315
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
孙波,赵丽霞,伊晓燕,等. 制备氮化镓绿光发光二极管外延结构的方法.
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