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题名: Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing
作者: Liu JP;  Kong MY;  Liu XF;  Li JP;  Huang DD;  Li LX;  Sun DZ
出版日期: 1999
会议日期: AUG 31-SEP 04, 1998
摘要: Strain relaxation in initially flat SiGe film on Si(1 0 0) during rapid thermal annealing is studied. The surface roughens after high-temperature annealing, which has been attributed to the intrinsic strain in the epilayers. It is interesting to find that high-temperature annealing also results in roughened interface, indicating the occurrence of preferential interdiffusion. It is suggested that the roughening at the surface makes the intrinsic strain in the epilayer as well as the substrate unequally distributed, causing preferential interdiffusion at the SiGe/Si interface during high-temperature annealing. (C) 1999 Elsevier Science B.V. All rights reserved.
会议名称: 10th International Conference on Molecular Beam Epitaxy (MBE-X)
KOS主题词: Quantum dots;  Relaxation
会议文集: JOURNAL OF CRYSTAL GROWTH, 201
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Liu JP; Kong MY; Liu XF; Li JP; Huang DD; Li LX; Sun DZ .Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing .见:ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 201,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,1999,556-559
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