In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD
Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY; Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
2002
会议名称International Conference on Silicon Carbide and Related Materials
会议录名称SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3
页码339-342
会议日期OCT 28-NOV 02, 2001
会议地点TSUKUBA, JAPAN
出版地BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND
出版者TRANS TECH PUBLICATIONS LTD
ISSN0255-5476
ISBN0-87849-894-X
部门归属chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要The heteroepitaxial growth of n-type and p-type 3C-SiC on (0001) sapphire substrates has been performed with a supply of SiH4+C2H4+H-2 system by introducing ammonia (NH3) and diborane (B2H6) precursors, respectively, into gas mixtures. Intentionally incorporated nitrogen impurity levels were affected by changing the Si/C ratio within the growth reactor. As an acceptor, boron can be added uniformly into the growing 3C-SiC epilayers. Nitrogen-doped 3C-SiC epilayers were n-type conduction, and boron-doped epilayers were p-type and probably heavily compensated.
关键词3c-sic In-situ Doping Low-pressure Cvd Sapphire Substrate Chemical-vapor-deposition Competition Epitaxy
学科领域半导体材料
主办者会议赞助商: Sci& Technol Promot Fdn Ibaraki.; Commwmorat Assoc Japan World Exposit.; Fdn Promot Mat Sci & Technol Japan.; Kansai Res Fdn Technol Promot.; Murate Sci Fdn.; Ogasawara Fdn Promot Sci & Engn.; Res Fdn Electrotechnol Chubu.; Support Ctr Adv Telecommunicat Technol Res.; Telecommunicat Adv Fdn.; ARO-Fe.; AOARD.; ONRIFO.; Cree Inc.; DENSO Corp.; Emcore Corp.; Epigress AB.; Fuji Elect Corp Res & Dev Ltd.; Furukawa Elect Co Ltd.; Hitachi Ltd.; Kansai Elect Power Co Inc.; Matsushita Elect Ind Co Inc.; Mitsubishi Elect Corp.; Mitsubishi Mat Corp.; New Japan Radio Co Ltd.; New Met & Chem Corp Ltd.; Nichia Corp.; Nippon Steel Corp.; Nissan Motor Co Ltd.; Nisso Shoji Co Ltd.; Oki Elect Ind Co Ltd.; ROHM Co Ltd.; Sanyo Elect Co Ltd.; Sharp Corp.; Shindengen Elect Mfg Co Ltd.; Shin-Etsu Hansotai Co Ltd.; Showa Denko K K.; Sony Corp.; Sterling Semiconductor Inc.; Sumitomo Corp.; Sumitomo Elect Ind Ltd.; Sumitomo Osaka Cement Co Ltd.; Toshiba Corp.; Toyoda Gosei Co Ltd.; Toyoda Cent R&D Labs Inc.; Toyo Tanso Co Ltd.; ULVAC Inc.; Universal Syst Co Ltd.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/14889
专题中国科学院半导体研究所(2009年前)
通讯作者Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式
GB/T 7714
Sun GS,Luo MC,Wang L,et al. In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD[C]. BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2002:339-342.
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