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题名: Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing
作者: Mo QW;  Fan TW;  Gong Q;  Wu J;  Wang ZG;  Bai YQ;  Zhang W
出版日期: 1998
会议日期: OCT 21-23, 1998
摘要: Self-organized InAs quantum; dots sheets are grown on GaAs(100) substrate and tapped by 80nm GaAs layer with molecular beam epitaxy. Samples were annealed and characterized with Raman spectra, transmission electron microscopy (TEM) and photolumincscence (PL). The Raman spectra indicates arsenic clusters in the GaAs capping layer. The TEM analysis revealed the relaxation of strain in some InAs islands with the introduction of the network of 90 dislocations. In addition, the structural changes also lead to the changes of the PL spectra from me InAs islands. Their correlation was discussed, Our results suggest:est that annealing may be used to intentionally modify me properties of self-organized InAs islands on GaAs.
会议名称: 5th International Conference on Solid-State and Integrated Circuit Technology
KOS主题词: atomic layer deposition;  Gallium arsenide;  Development;  Dislocations;  Temperature;  mechanism
会议文集: 1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Mo QW; Fan TW; Gong Q; Wu J; Wang ZG; Bai YQ; Zhang W .Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing .见:IEEE .1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS,345 E 47TH ST, NEW YORK, NY 10017 USA ,1998,641-644
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