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题名: Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures
作者: Yuan HR;  Lu DC;  Liu XL;  Han PD;  Wang XH;  Wang D
出版日期: 2000
会议日期: SEP 24-27, 2000
摘要: Indium (In)-doping was applied in GaN layers during growth of AlGaN/GaN heterostructure with unintentionally doped or modulation Si-doped AlGaN layers. It was found that In-doping was effective in improving electron sheet density of two-dimensional-electron-gas (2DEG) in the heterostructures. Furthermore, In-doping also improved mobility in heterostructures with Si modulation-doped in AlGaN layers. The possible reasons were discussed. X-ray diffraction (XRD) and wet chemical etching revealed that crystalline quality of GaN was improved by In-doping. It was proposed that In-doping modified growth kinetics of GaN.
会议名称: International Workshop on Nitride Semiconductors (IWN 2000)
KOS主题词: Electron gas;  X-ray crystallography;  Aggressiveness;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  atomic layer deposition;  Migration, Internal;  Development;  Photography--Films;  Finite volume method
会议文集: PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Yuan HR; Lu DC; Liu XL; Han PD; Wang XH; Wang D .Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures .见:INST PURE APPLIED PHYSICS .PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1,DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4 CHOME, TOKYO, 105-0004, JAPAN ,2000,923-926
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