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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中科院半导体材料科... [12]
半导体集成技术工程研... [2]
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杨晓光 [5]
王科范 [2]
杨涛 [2]
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无权访问的条目
期刊论文
Authors:
Lu, Guangze
;
Lv, Zunren
;
Zhang, Zhongkai
;
Yang, Xiaoguang
;
Yang, Tao
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View/Download:0/0
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Submit date:2022/12/29
无权访问的条目
期刊论文
Authors:
Yang, Xiaoguang
;
Wang, Kefan
;
Gu, Yongxian
;
Ni, Haiqiao
;
Wang, Xiaodong
;
Yang, Tao
;
Wang, Zhanguo
Adobe PDF(379Kb)
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View/Download:1096/280
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Submit date:2013/08/27
无权访问的条目
期刊论文
Authors:
Wang, Ke-Fan
;
Gu, Yongxian
;
Yang, Xiaoguang
;
Yang, Tao
;
Wang, Zhanguo
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View/Download:705/259
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Submit date:2013/04/23
In(Ga)As/GaAs量子点中间能带太阳能电池的研究
学位论文
, 北京: 中国科学院研究生院, 2011
Authors:
杨晓光
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View/Download:1046/116
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Submit date:2011/06/12
无权访问的条目
期刊论文
Authors:
Yang XG
;
Yang T
;
Wang KF
;
Ji HM
;
Ni HQ
;
Niu ZC
;
Wang ZG
;
Yang, XG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. tyang@semi.ac.cn
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View/Download:1323/386
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Submit date:2011/07/05
无权访问的条目
期刊论文
Authors:
Yang XG
;
Yang T
;
Wang KF
;
Gu YX
;
Ji HM
;
Xu PF
;
Ni HQ
;
Niu ZC
;
Wang XD
;
Chen YL
;
Wang ZG
;
Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. tyang@semi.ac.cn
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Submit date:2011/07/05
硅掺杂的砷化铟/砷化镓量子点太阳电池的制作方法
专利
专利类型: 发明, 专利号: CN102130206A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:
王科范
;
杨晓光
;
杨涛
;
王占国
Adobe PDF(257Kb)
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View/Download:1257/248
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Submit date:2012/09/09
锑辅助生长的砷化铟/砷化镓量子点太阳电池的制作方法
专利
专利类型: 发明, 专利号: CN102176490A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:
杨晓光
;
杨涛
Adobe PDF(313Kb)
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View/Download:1017/211
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Submit date:2012/09/09
磷化镓铝应力补偿的砷化铟量子点太阳电池制作方法
专利
专利类型: 发明, 专利号: CN201010217374.0, 公开日期: 2011-08-31
Inventors:
王科范
;
杨晓光
;
杨涛
;
王占国
Adobe PDF(249Kb)
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View/Download:1217/267
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Submit date:2011/08/31
硅基高晶体质量InAsSb平面纳米线的生长方法
专利
专利类型: 发明, 公开日期: 2016-09-12
Inventors:
杨涛
;
杜文娜
;
杨晓光
;
王小耶
;
季祥海
;
王占国
Adobe PDF(878Kb)
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Submit date:2016/09/12