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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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光电子器件国家工程中... [2]
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905 nm 外延叠层多有源区激光器的研制
学位论文
, 北京: 中国科学院研究生院, 2018
Authors:
侯继达
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Submit date：2018/06/05
半导体激光器
脉冲激光器
大功率
905 Nm
多有源区外延结构、采用其的半导体激光器及其制造方法
专利
专利类型: 发明, 公开日期: 2016-09-12
Inventors:
侯继达
;
熊聪
;
刘素平
;
马骁宇
Adobe PDF(771Kb)
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Submit date：2016/09/12
