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中国科学院半导体研究所机构知识库
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光电子器件国家工程中... [1]
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多有源区外延结构、采用其的半导体激光器及其制造方法
专利
专利类型: 发明, 公开日期: 2016-09-12
Inventors:
侯继达
;
熊聪
;
刘素平
;
马骁宇
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Submit date：2016/09/12
