SEMI OpenIR  > 光电子器件国家工程中心
多有源区外延结构、采用其的半导体激光器及其制造方法
侯继达; 熊聪; 刘素平; 马骁宇
Rights Holder中国科学院半导体所
Date Available2016-09-12
Country中国
Subtype发明
Subject Area半导体器件
Application Date2015-12-30
Application NumberCN201511024496.7
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27377
Collection光电子器件国家工程中心
Recommended Citation
GB/T 7714
侯继达,熊聪,刘素平,等. 多有源区外延结构、采用其的半导体激光器及其制造方法.
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