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High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Wang ZM;  Wang LM;  He GP;  Yang YL;  Zhang HQ;  Zhou XN;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(189Kb)  |  收藏  |  浏览/下载：1337/273  |  提交时间：2010/10/29
Ingaasp  Strained Layer Quantum Well  Laser Diode  Mocvd  
Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Yang GW;  Xu ZT;  Xu JY;  Ma XY;  Zhang JM;  Chen LH;  Yang GW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(356Kb)  |  收藏  |  浏览/下载：1545/382  |  提交时间：2010/10/29
Strained Quantum Well  Semiconductor Lasers  
1.3 mu m InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Chen B;  Wang W;  Wang XJ;  Zhang JY;  Zhu HL;  Zhou F;  Chen B Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(162Kb)  |  收藏  |  浏览/下载：1389/248  |  提交时间：2010/10/29
1.3 Mu m  Complex-coupled Grating  Dfb Laser  
The enhancement of spontaneous emission factor in selectively oxidized vertical cavity lasers with double oxide layers 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Huang YZ;  Huang YZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(350Kb)  |  收藏  |  浏览/下载：1263/357  |  提交时间：2010/10/29
Vertical-cavity Lasers  Spontaneous Emission Factor  Laser Modes  Alas Oxidation  
Visible vertical cavity surface emitting laser 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Cheng P;  Ma XY;  Gao JH;  Kang XJ;  Cao Q;  Wang HJ;  Luo LP;  Zhang CH;  Lu XL;  Lin SM;  Cheng P Acad Sinica Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(469Kb)  |  收藏  |  浏览/下载：1505/385  |  提交时间：2010/10/29
Semiconductor Lasers  Oxidation  
The study of single mode 650nm AlGaInP quantum well laser diodes for DVD 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Wang LM;  Yang YL;  Zhang HQ;  Zhang XY;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(159Kb)  |  收藏  |  浏览/下载：1335/250  |  提交时间：2010/10/29
Algainp  Quantum Well  Laser Diode  Mocvd  Dvd  
Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Mao DS;  Tan MQ;  Chen LH;  Mao DS Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1469/397  |  提交时间：2010/10/29
Ecr Cvd  Thin Film  Photoelectronic Device