High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method
	Ma XY; Cao Q; Wang ST; Guo L; Wang ZM; Wang LM; He GP; Yang YL; Zhang HQ; Zhou XN; Chen LH; Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
	1998
会议名称	Semiconductor Lasers III
会议录名称	SEMICONDUCTOR LASERS III, 3547
页码	8-11
会议日期	SEP 16-18, 1998
会议地点	BEIJING, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3008-0
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	High performance uncooled 1.55 mu m InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were reported in this paper. Whole MOCVD over growth method were applied in this work. The threshold currents of 5mA and the highest lasing temperature of 122 degrees C were obtained.
关键词	Ingaasp Strained Layer Quantum Well Laser Diode Mocvd
学科领域	半导体物理
主办者	SPIE.; COS.; COEMA.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13881
专题	中国科学院半导体研究所（2009年前）
通讯作者	Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Ma XY,Cao Q,Wang ST,et al. High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1998:8-11.

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