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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes
会议论文
2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, Sanya, PEOPLES R CHINA, JAN 06-09, 2008
作者:
Zhou, W
;
Yang, JL
;
Sun, GS
;
Liu, XF
;
Yang, FH
;
Li, JM
;
Zhou, W, CAS, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(511Kb)
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收藏
  |  
浏览/下载:2236/511
  |  
提交时间:2010/03/09
Bulge Test Fracture Property
Silicon Carbide Thin Films
Weibull Distribution Function
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Zhang, Y
;
Yan, FW
;
Gao, HY
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
;
Zhang, Y, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(929Kb)
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  |  
浏览/下载:3806/1292
  |  
提交时间:2010/03/09
Gan
Nitrides
Led
Mocvd
Patterned Sapphire Substrate
Wet Etching
In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator
会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:
Liu, YF
;
Xie, J
;
Yang, JL
;
Tang, LJ
;
Yang, FH
;
Liu, YF, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(1394Kb)
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收藏
  |  
浏览/下载:1520/370
  |  
提交时间:2010/03/09
Films
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
;
Wang, XY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(229Kb)
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收藏
  |  
浏览/下载:1728/341
  |  
提交时间:2010/03/29
Buffer Layer
Stress
Photodiodes
Reduction
Detectors
Sapphire
Epitaxy
Growth
Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth
会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:
Zhao C
;
Chen YH
;
Zhao M
;
Zhang CL
;
Xu B
;
Yu LK
;
Sun J
;
Lei W
;
Wang ZG
;
Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: czhao@semi.ac.cn
Adobe PDF(330Kb)
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浏览/下载:1815/335
  |  
提交时间:2010/03/29
Monte Carlo Simulation
Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template
会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
作者:
Liu, Z
;
Wang, JX
;
Wang, XL
;
Hu, GX
;
Guo, LC
;
Liu, HX
;
Li, JP
;
Li, JM
;
Zeng, YP
;
Wang, JX, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: jxwang@red.semi.ac.cn
Adobe PDF(253Kb)
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收藏
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浏览/下载:1710/543
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提交时间:2010/03/29
Surface Morphology
Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer
会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:
Gao, X
;
Li, JM
;
Sun, GS
;
Zhang, NH
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Gao, X, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1172Kb)
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收藏
  |  
浏览/下载:1248/196
  |  
提交时间:2010/03/29
Si(111)
Aln
MOCVD growth of high quality crack-free GaN on Si(III) substrates
会议论文
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, KOWLOON, PEOPLES R CHINA, SEP 12-14, 2003
作者:
Zhang BS
;
Zhu JJ
;
Wang YT
;
Yang H
;
Zhang BS Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(229Kb)
  |  
收藏
  |  
浏览/下载:1487/302
  |  
提交时间:2010/10/29
Vapor-phase Epitaxy
Layers
Aln
Stress analysis of silica-based arrayed waveguide grating by a finite element method
会议论文
MATERIALS, DEVICES, AND SYSTEMS FOR DISPLAY AND LIGHTING, 4918, SHANGHAI, PEOPLES R CHINA, OCT 14-18, 2002
作者:
Deng XQ
;
Yang QQ
;
Wang HJ
;
Hu XW
;
Wang QM
;
Deng XQ Chinese Acad Sci Inst Semicond R&D Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(256Kb)
  |  
收藏
  |  
浏览/下载:1338/269
  |  
提交时间:2010/10/29
Finite Element Method
Stress
Silica Optical Waveguide On silicOn
Birefringence
Optical Wave-guides
Difference Method
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
;
Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(187Kb)
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收藏
  |  
浏览/下载:1389/345
  |  
提交时间:2010/11/15
Impurities
Molecular Beam Epitaxy
Nitrides
Semiconducting Iii-v Materials
Gallium Nitride
Sapphire Substrate
Defects
Heterostructure
Semiconductors
Stress