High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
	Wang, XY (Wang, Xiaoyan); Wang, XL (Wang, Xiaoliang); Wang, BZ (Wang, Baozhu); Xiao, HL (Xiao, Hongling); Liu, HX (Liu, Hongxin); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin); Wang, XY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
	2007
会议名称	33rd International Symposium on Compound Semiconductors
会议录名称	Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS
页码	Vol 4 No 5 4 (5): 1613-1616
会议日期	AUG 13-17, 2006
会议地点	Vancouver, CANADA
出版地	PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
出版者	WILEY-V C H VERLAG GMBH
ISSN	1610-1634
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	A Schottky-based metal-semiconductor-metal photodetector is fabricated on 1 mu m-thick, crack-free GaN on Si (I 11) substrate using an optimized AlxGal-xN/AlN complex buffer layer. It exhibits a high responsivity of 4600A/W at 366nm which may be due to both a crack-free sample and high internal gain. The relationship between responsivity and bias voltage is also investigated. The experiment results indicate that the responsivity increases with the bias voltage and shows a tendency to saturate. (c) 2007 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim.
关键词	Buffer Layer Stress Photodiodes Reduction Detectors Sapphire Epitaxy Growth
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9766
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang, XY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Wang, XY ,Wang, XL ,Wang, BZ ,et al. High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)[C]. PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY:WILEY-V C H VERLAG GMBH,2007:Vol 4 No 5 4 (5): 1613-1616.

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