Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes
	Zhou, W; Yang, JL; Sun, GS; Liu, XF; Yang, FH; Li, JM; Zhou, W, CAS, Inst Semicond, Beijing 100864, Peoples R China.
	2008
会议名称	3rd IEEE International Conference of Nano/Micro Engineered and Molecular Systems
会议录名称	2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS
页码	VOLS 1-3: 530-533
会议日期	JAN 06-09, 2008
会议地点	Sanya, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-1907-4
部门归属	[zhou, wei; yang, jinling; sun, guosheng; liu, xingfang; yang, fuhua; li, jinmin] cas, inst semicond, beijing 100864, peoples r china
摘要	The mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates were characterized using bulge testing combined with a refined load-deflection model for long rectangular membranes. Plane-strain modulus E-ps, prestress so, and fracture strength s(max) for 3C-SiC thin films with thickness of 0.40 mu m and 1.42 mu m were extracted. The E, values of SiC are strongly dependent on grain orientation. The thicker SIC film presents lower so than the thinner film due to stress relaxation. The s(max) values decrease with increasing film thickness. The statistical analysis of the fracture strength data were achieved by Weibull distribution function and the fracture origins were predicted.
关键词	Bulge Test Fracture Property Silicon Carbide Thin Films Weibull Distribution Function
学科领域	半导体材料
主办者	IEEE.; State Key Lab Multi Spectral Informat Proc Technol.; Chinese Soc Micro Nano Technol.; Ctr Micro & Nano Syst.; IEEE Nanotechnol Council.; Shenyang Inst Automat.; Univ California.; UCLA, Ctr Cell Control.; Global Engn Technol Inst.; Nanosurf AG, Smart Instruments Nanosci & Nanotechnol.; US Army Int Technol Ctr, Pacific.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7772
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhou, W, CAS, Inst Semicond, Beijing 100864, Peoples R China.
推荐引用方式 GB/T 7714	Zhou, W,Yang, JL,Sun, GS,et al. Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1-3: 530-533.

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