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Large-Signal Performance of 1.3 mu m InAs/GaAs quantum-dot lasers 会议论文
, Shanghai, PEOPLES R CHINA, AUG 30-SEP 03, 2009
作者:  Ji;  HM;  Cao;  YL;  Xu PF;  Gu YX;  Ma WQ;  Liu Y;  Wang X;  Xie L;  Yang T;  Ji, HM, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China
Adobe PDF(274Kb)  |  收藏  |  浏览/下载：1786/471  |  提交时间：2010/06/04
Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Gyeongju, SOUTH KOREA, MAY 11-16, 2008
作者:  Ji HM;  Yang T;  Cao YL;  Ma WQ;  Cao Q;  Chen LH;  Yang, T, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(244Kb)  |  收藏  |  浏览/下载：1693/328  |  提交时间：2010/03/09
Density-of-states  
无权访问的条目 期刊论文
作者:  Cao YL;  Yang T;  Ji HM;  Ma WQ;  Cao Q;  Chen LH;  Cao YL Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: tyang@semi.ac.cn
Adobe PDF(431Kb)  |  收藏  |  浏览/下载：1240/359  |  提交时间：2010/03/08
无权访问的条目 期刊论文
作者:  Cao YL (Cao Yu-Lian);  Lian P (Lian Peng);  Ma WQ (Ma Wen-Quan);  Wang Q (Wang Qing);  Wu XM (Wu Xu-Ming);  He GR (He Guo-Rong);  Li H (Li Hui);  Wang XD (Wang Xiao-Dong);  Song GF (Song Guo-Feng);  Chen LH (Chen Liang-Hui);  Cao, YL, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China. E-mail: caoyl@semi.ac.cn
Adobe PDF(249Kb)  |  收藏  |  浏览/下载：1264/298  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  He Guorong;  Yang Guohua;  Zheng Wanhua;  Wu Xuming;  Wang Xiaodong;  Cao Yulian;  Wang Qing;  Chen Lianghui
Adobe PDF(367Kb)  |  收藏  |  浏览/下载：1076/449  |  提交时间：2010/11/23
Design of spectrometer based on volume phase grating for near infrared range 会议论文
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 3, Xian, PEOPLES R CHINA, AUG 18-22, 2004
作者:  Li F;  Xin HL;  Cao P;  Liu YL;  Li F Res & Dev Ctr Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(371Kb)  |  收藏  |  浏览/下载：1310/297  |  提交时间：2010/10/29
Spectrometer  Volume Phase Grating  Optical Design  Resolution  
Tolerance analysis for incident angle of volume phase holographic grating used in optical channel performance monitor 会议论文
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 3, Xian, PEOPLES R CHINA, AUG 18-22, 2004
作者:  Xin HL;  Li F;  Cao P;  He YJ;  Chen P;  Liu YL;  Xin HL Chinese Acad Sci Inst Semicond Res & Dev Ctr Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(571Kb)  |  收藏  |  浏览/下载：1261/196  |  提交时间：2010/10/29
Ocpm  Vphg  Incident Angle  Tolerance  
The effect of Fabry-Perot interference on the packaging of SOI-based optoelectronic devices 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Xin HL;  Chen P;  Li F;  Wang CX;  Cao P;  Liu YL;  Xin, HL, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(142Kb)  |  收藏  |  浏览/下载：1297/255  |  提交时间：2010/03/29
650nm AlGaInP quantum well lasers for the application of DVD 会议论文
PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899, SINGAPORE, SINGAPORE, DEC 01-03, 1999
作者:  Chen LH;  Ma XY;  Guo L;  Ma J;  Ding HY;  Cao Q;  Wang LM;  Zhang GZ;  Yang YL;  Wang GH;  Tan MQ;  Chen LH Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1421/409  |  提交时间：2010/10/29
Dvd  Laser Diode  Visible  Algainp  Mocvd  Operation  Diodes  
High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Wang ZM;  Wang LM;  He GP;  Yang YL;  Zhang HQ;  Zhou XN;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(189Kb)  |  收藏  |  浏览/下载：1207/273  |  提交时间：2010/10/29
Ingaasp  Strained Layer Quantum Well  Laser Diode  Mocvd