650nm AlGaInP quantum well lasers for the application of DVD

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	650nm AlGaInP quantum well lasers for the application of DVD
	Chen LH; Ma XY; Guo L; Ma J; Ding HY; Cao Q; Wang LM; Zhang GZ; Yang YL; Wang GH; Tan MQ; Chen LH Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	1999
会议名称	SPIE Conference on Photonics Technology into the 21st Century - Semiconductors, Microstructures, and Nanostructures
会议录名称	PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899
页码	367-373
会议日期	DEC 01-03, 1999
会议地点	SINGAPORE, SINGAPORE
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3501-5
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Main application of 650nm band laser diodes are for digital versatile disk (DVD). We demonstrate here the 650nm AlGaInP LD grown by LP-MOCVD with the structure of selected buried ridge waveguide. Excellent performance of LD have been achieved such as threshold current, threshold current density as low as 20mA and 350A/cm(2) respectively at room temperature, the operating temperature up to 90 for the linear power output of 5mw. RIN is about -130db/Hz, The samples of LD have been certified by PUH manufacturers.
关键词	Dvd Laser Diode Visible Algainp Mocvd Operation Diodes
学科领域	光电子学
主办者	SPIE.; Nanyang Technol Univ.; SPIE, Singapore Chapter.; Inst Phys.; USAF, Asian Off Aerosp Res & Dev.; USA, Res Off Far E.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13761
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen LH Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Chen LH,Ma XY,Guo L,et al. 650nm AlGaInP quantum well lasers for the application of DVD[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1999:367-373.

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