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Fabrication and Investigation of High Efficiency Evanescently Coupled Uni-Traveling Carrier Photodiodes 会议论文
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), Singapore, SINGAPORE, DEC 08-11, 2008
Authors:  Zhang YX;  Liao ZY;  Sun Y;  Chen WX;  Zhao LJ;  Zhu HL;  Wang W;  Zhang, YX, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Optimization  
Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
Authors:  Xu B;  Wang ZG;  Chen YH;  Jin P;  Ye XL;  Liu HY;  Zhang ZY;  Shi GX;  Zhang CL;  Wang YL;  Liu FQ;  Xu, B, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Dots  
Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2004, 卷号: 85, 期号: 14, 页码: 2791-2793
Authors:  Jin P;  Li CM;  Zhang ZY;  Liu FQ;  Chen YH;  Ye XL;  Xu B;  Wang ZG;  Jin, P, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: pengjin@red.semi.ac.cn
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Electron-hole Alignment  
The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 253, 期号: 1-4, 页码: 59-63
Authors:  Zhang ZY;  Jin P;  Li CM;  Ye XL;  Meng XQ;  Xu B;  Liu FQ;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Low Dimensional Structures  Nanostructures  Quantum Dots  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Laser Diode  Time-resolved Photoluminescence  
Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 253, 期号: 1-4, 页码: 198-202
Authors:  Li CM;  Liu FQ;  Zhang ZY;  Meng XQ;  Jin P;  Wang ZG;  Li CM,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Lattice-mismatch  Microstructure  Radiation  X-ray Diffraction  Molecular Beam Epitaxy  Infrared Devices  Quantum Cascade Laser  Mu-m  
Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer 期刊论文
SOLID STATE COMMUNICATIONS, 2003, 卷号: 126, 期号: 7, 页码: 391-394
Authors:  Zhang ZY;  Yang CL;  Wei YQ;  Ye XL;  Jin P;  Li CM;  Meng XQ;  Xu B;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Nanostructures  Semiconductors  Optical Properties  Epitaxy  
Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 93, 期号: 7, 页码: 4169-4172
Authors:  Jin P;  Meng XQ;  Zhang ZY;  Li CM;  Xu B;  Liu FQ;  Wang ZG;  Li YG;  Zhang CZ;  Pan SH;  Jin P,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: pengjin@red.semi.ac.cn
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Franz-keldysh Oscillations  Microscopy  Islands  
Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 249, 期号: 1-2, 页码: 72-77
Authors:  Li DB;  Dong X;  Huang JS;  Liu XL;  Xu ZY;  Wang XH;  Zhang Z;  Wang ZG;  Li DB,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat,POB 912,Beijing 100083,Peoples R China.
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Nanostructures  Stretched Exponential  Time-resolved Photolummescence  Metalorganic Vapor Phase Epitaxy  Nitrides  Inalgan  Inxalyga1-x-yn Quaternary Alloys  Time-resolved Photoluminescence  Multiple-quantum Wells  Alingan/gan Heterostructures  Gan  Decay  Luminescence  Sapphire  Devices  Silicon  
A novel application to quantum dot materials to the active region of superluminescent diodes 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 1, 页码: 25-29
Authors:  Zhang ZY;  Meng XQ;  Jin P;  Li CM;  Qu SC;  Xu B;  Ye XL;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Atomic Force Microscopy  Low Dimensional Structures  Quantum Dots  Strain  Molecular Beam Epitaxy  Superluminescent Diodes  1.3 Mu-m  High-power  Integrated Absorber  Inas Islands  Spectrum  Window  Layer  Size  
Modulation spectroscopy of GaAs covered by InAs quantum dots 期刊论文
CHINESE PHYSICS LETTERS, 2002, 卷号: 19, 期号: 7, 页码: 1010-1012
Authors:  Jin P;  Meng XQ;  Zhang ZY;  Li CM;  Qu SC;  Xu B;  Liu FQ;  Wang ZG;  Li YG;  Zhang CZ;  Pan SH;  Jin P,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Franz-keldysh Oscillations  Microscopy  Surfaces  Islands  Layer