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Static and dynamic signatures of anisotropic electronic phase separation in La 2/3 Ca 1/3 MnO 3 thin films under anisotropic strain 期刊论文
Physical Review B, 2018, 卷号: 97, 期号: 21, 页码: 214428
Authors:  L. Hu;  L. Q. Yu;  P. Xiong;  X. L. Wang;  J. H. Zhao;  L. F. Wang;  Z. Huang;  W. B. Wu
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Tunable bandgap in hybrid perovskite CH3NH3Pb(Br3−yXy) single crystals and photodetector applications 期刊论文
AIP Advances, 2016, 卷号: 6, 期号: 4, 页码: 045115
Authors:  L. Wang;  G. D. Yuan;  R. F. Duan;  F. Huang;  T. B. Wei;  Z. Q. Liu;  J. X. Wang;  J. M. Li
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Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells 期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 19, 页码: 192109 - 192109-5
Authors:  G. Chen, Z. L. Li, X. Q. Wang, C. C. Huang, X. Rong, L. W. Sang, F. J. Xu, N. Tang, Z. X. Qin, M. Sumiya, Y. H. Chen, W. K. Ge, B. Shen
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Band modification in (Ga, Mn) As evidenced by new measurement scheme - photoresistance magnetic circular dichroism 期刊论文
EUROPEAN PHYSICAL JOURNAL B, 2012, 卷号: 85, 期号: 11, 页码: 381
Authors:  Huang XJ (Huang, X. J.);  Wang LG (Wang, L. G.);  Chen L (Chen, L.);  Zhao JH (Zhao, J. H.);  Zheng HZ (Zheng, H. Z.)
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The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots 期刊论文
JOURNAL OF OPTICS, 2010, 卷号: 12, 期号: 5, 页码: Art. No. 055203
Authors:  Huang X (Huang X.);  Zhang XH (Zhang X. H.);  Zhu YG (Zhu Y. G.);  Li T (Li T.);  Han LF (Han L. F.);  Shang XJ (Shang X. J.);  Ni HQ (Ni H. Q.);  Niu ZC (Niu Z. C.);  Zhang, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Inas Quantum Dots  Nonlinear Refraction  Reflection Z-scan  Dc Electric Field Effect  Electrooptic Properties  Saturable Absorber  Optical-properties  Well Structures  Single-beam  Band-gap  Electroabsorption  Absorption  Reflection  Dependence  
Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 期号: 13, 页码: Art. No. 132908
Authors:  Zheng XH (Zheng X. H.);  Huang AP (Huang A. P.);  Xiao ZS (Xiao Z. S.);  Yang ZC (Yang Z. C.);  Wang M (Wang M.);  Zhang XW (Zhang X. W.);  Wang WW (Wang W. W.);  Chu PK (Chu Paul K.);  Huang, AP, BeihangUniv, DeptPhys, Beijing 100191, Peoples R China. 电子邮箱地址:
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Oxygen  Gate  Diffusion  Films  
Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2010, 卷号: 31, 期号: 10, 页码: 1101-1103
Authors:  Yang ZC (Yang Z. C.);  Huang AP (Huang A. P.);  Zheng XH (Zheng X. H.);  Xiao ZS (Xiao Z. S.);  Liu XY (Liu X. Y.);  Zhang XW (Zhang X. W.);  Chu PK (Chu Paul K.);  Wang WW (Wang W. W.);  Yang, ZC, BeihangUniv, DeptPhys, Beijing 100191, Peoples R China. 电子邮箱地址:
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Electron State Density  Fermi-level Pinning (Flp)  Mis Structures  Work Function (Wf)  Work Function  
Evaluation of thermal radiation dependent performance of GaSb thermophotovoltaic cell based on an analytical absorption coefficient model 期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 卷号: 94, 期号: 10, 页码: 1704-1710
Authors:  Wang Y (Wang Y.);  Chen NF (Chen N. F.);  Zhang XW (Zhang X. W.);  Huang TM (Huang T. M.);  Yin ZG (Yin Z. G.);  Wang YS (Wang Y. S.);  Zhang H (Zhang H.)
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Thermophotovoltaic  Gallium Antimonide  Absorption Coefficient  
Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 卷号: 25, 期号: 9, 页码: Art. No. 095002
Authors:  Wang Y (Wang Y.);  Chen NF (Chen N. F.);  Zhang XW (Zhang X. W.);  Huang TM (Huang T. M.);  Yin ZG (Yin Z. G.);  Bai YM (Bai Y. M.)
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Optical Dielectric Function  Dispersion-relations  Carrier Mobilities  Phase Epitaxy  Doped Gaas  Devices  Gasb  Inp  Alxga1-xas  Ingaassb  
Two-port InGaAsP/InP square resonator microlasers 期刊论文
ELECTRONICS LETTERS, 2010, 卷号: 46, 期号: 8, 页码: 585-U62
Authors:  Che KJ (Che K. -J.);  Lin JD (Lin J. -D.);  Huang YZ (Huang Y. -Z.);  Yang YD (Yang Y. -D.);  Du Y (Du Y.);  Che, KJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址:
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