SEMI OpenIR

Browse/Search Results:  1-10 of 28 Help

Selected(0)Clear Items/Page:    Sort:
A 7.81 W 355 nm ultraviolet picosecond laser using La2CaB10O19 as a nonlinear optical crystal 期刊论文
OPTICS EXPRESS, 2014, 卷号: 22, 期号: 14, 页码: 17187-17192
Authors:  Zhang, L;  Li, K;  Xu, DG;  Wang, N;  Lin, XC;  Wu, YC;  Yao, JQ;  Yu, HJ;  Zhang, GC;  Wang, YY;  Wang, LR;  Shan, FX;  Yan, C;  Yang, YY;  Wang, BH
Adobe PDF(406Kb)  |  Favorite  |  View/Download:747/249  |  Submit date:2015/03/20
High-power picosecond 355 nm laser based on La2CaB10O19 crystal 期刊论文
OPTICS LETTERS, 2014, 卷号: 39, 期号: 11, 页码: 3305-3307
Authors:  Li, K;  Zhang, L;  Xu, DG;  Zhang, GC;  Yu, HJ;  Wang, YY;  Shan, FX;  Wang, LR;  Yan, C;  Wu, YC;  Lin, XC;  Yao, JQ
Adobe PDF(355Kb)  |  Favorite  |  View/Download:833/225  |  Submit date:2015/03/20
Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates 期刊论文
RSC ADVANCES, 2014, 卷号: 4, 期号: 98, 页码: 55430-55434
Authors:  Zheng, CC;  Ning, JQ;  Wu, ZP;  Wang, JF;  Zhao, DG;  Xu, K;  Gao, J;  Xu, SJ
Adobe PDF(652Kb)  |  Favorite  |  View/Download:387/99  |  Submit date:2015/03/20
Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique 期刊论文
APPLIED PHYSICS EXPRESS, 2012, 卷号: 5, 期号: 9, 页码: 091001
Authors:  Lu LW (Lu, Liwu);  Su SC (Su, Shichen);  Ling CC (Ling, Chi-Chung);  Xu SJ (Xu, Shijie);  Zhao DG (Zhao, Degang);  Zhu JJ (Zhu, Jianjun);  Yang H (Yang, Hui);  Wang JN (Wang, Jiannong);  Gey WK (Gey, Weikun)
Adobe PDF(449Kb)  |  Favorite  |  View/Download:1020/290  |  Submit date:2013/04/02
Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration? 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 19, 页码: 191102
Authors:  Zheng CC (Zheng, C. C.);  Xu SJ (Xu, S. J.);  Zhang F (Zhang, F.);  Ning JQ (Ning, J. Q.);  Zhao DG (Zhao, D. G.);  Yang H (Yang, H.);  Che CM (Che, C. M.)
Adobe PDF(633Kb)  |  Favorite  |  View/Download:785/269  |  Submit date:2013/03/27
Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 7, 页码: Art. No. 076804
Authors:  Guo X (Guo Xi);  Wang YT (Wang Yu-Tian);  Zhao DG (Zhao De-Gang);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Wang H (Wang Hui);  Zhang SM (Zhang Shu-Ming);  Qiu YX (Qiu Yong-Xin);  Xu K (Xu Ke);  Yang H (Yang Hui);  Guo, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: guox@semi.ac.cn
Adobe PDF(802Kb)  |  Favorite  |  View/Download:1174/334  |  Submit date:2010/08/17
In-plane Grazing Incidence X-ray Diffraction  Gallium Nitride  Mosaic Structure  Biaxial Strain  Chemical-vapor-deposition  Lattice-constants  Aln  
Optical properties of light-hole excitons in GaN epilayers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 11, 页码: Article no.116103
Authors:  Zhang F;  Xu SJ;  Ning JQ;  Zheng CC;  Zhao DG;  Yang H;  Che CM;  Zhang, F, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. sjxu@hkucc.hku.hk
Adobe PDF(369Kb)  |  Favorite  |  View/Download:913/323  |  Submit date:2011/07/05
Transitions  Absorption  
Violet electroluminescence of AlInGaN-InGaN multiquantum-well light-emitting diodes: Quantum-confined stark effect and heating effect 期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 卷号: 19, 期号: 9-12, 页码: 789-791
Authors:  Li, J (Li, Jun);  Shi, SL (Shi, S. L.);  Wang, YJ (Wang, Y. J.);  Xu, SJ (Xu, S. J.);  Zhao, DG (Zhao, D. G.);  Zhu, JJ (Zhu, J. J.);  Yang, H (Yang, H.);  Lu, F (Lu, F.);  Li, J, Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China. 电子邮箱地址: sjxu@hkucc.hku.hk
Adobe PDF(223Kb)  |  Favorite  |  View/Download:926/374  |  Submit date:2010/03/29
Alingan  
Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 3, 页码: Art.No.033503
Authors:  Wang RX (Wang R. X.);  Xu SJ (Xu S. J.);  Djurisic AB (Djurisic A. B.);  Beling CD (Beling C. D.);  Cheung CK (Cheung C. K.);  Cheung CH (Cheung C. H.);  Fung S (Fung S.);  Zhao DG (Zhao D. G.);  Yang H (Yang H.);  Tao XM (Tao X. M.);  Xu, SJ, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail: sjxu@hkucc.hku.hk
Adobe PDF(85Kb)  |  Favorite  |  View/Download:1163/373  |  Submit date:2010/04/11
Molecular-beam Epitaxy  N-type Gan  Electrical-properties  Bias Leakage  Diodes  Oxygen  
Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 14, 页码: Art.No.143505
Authors:  Wang RX (Wang R. X.);  Xu SJ (Xu S. J.);  Shi SL (Shi S. L.);  Beling CD (Beling C. D.);  Fung S (Fung S.);  Zhao DG (Zhao D. G.);  Yang H (Yang H.);  Tao XM (Tao X. M.);  Wang, RX, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail: sjxu@hkucc.hku.hk
Adobe PDF(256Kb)  |  Favorite  |  View/Download:996/233  |  Submit date:2010/04/11
Dislocations  Degradation