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Photon wavelength dependent valley photocurrent in multilayer MoS2 期刊论文
PHYSICAL REVIEW B, 2017, 卷号: 96, 页码: 241304
Authors:  Hongming Guan;  Ning Tang;  Xiaolong Xu;  LiangLiang Shang;  Wei Huang;  Lei Fu;  Xianfa Fang;  Jiachen Yu;  Caifeng Zhang;  Xiaoyue Zhang;  Lun Dai;  Yonghai Chen;  Weikun Ge;  Bo Shen
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Observation of photo darkening in self assembled InGaAs/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2013, 卷号: 113, 期号: 17, 页码: 173508
Authors:  Zhang, Hongyi;  Chen, Yonghai;  Zhou, Xiaolong;  Jia, Yanan;  Ye, Xiaoling;  Xu, Bo;  Wang, Zhanguo
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Different growth mechanisms of bimodal In As/GaAs QDs 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 卷号: 43, 期号: 1, 页码: 308-311
Authors:  Zhou GY;  Chen YH;  Zhou XL;  Xu B;  Ye XL;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Inas Quantum Dots  Gaas(001)  Relaxation  Transition  Gaas  
Study on the perfection of in situ P-injection synthesis LEC-InP single crystals 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 264, 期号: 1-3, 页码: 17-20
Authors:  Zhou XL;  Zhao YW;  Sun NF;  Yang GY;  Xu YQ;  Sun TN;  Zhou, XL, Hebei Semicond Res Inst, POB 17940,Shijiazhuang, Hebei 050051, Peoples R China. 电子邮箱地址: tnsun@heinfo.net
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Etch-pit Density  
掺铒硅光致发光的研究 期刊论文
真空科学与技术学报, 1999, 卷号: 19, 期号: 3, 页码: 13
Authors:  顾诠;  何杰;  陈维德;  许振嘉;  谢小龙;  梁建军;  马智训;  廖显伯
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利用快速热退火在n-GaAs上形成Ge/pdge欧姆接触 期刊论文
半导体学报, 1996, 卷号: 17, 期号: 10, 页码: 784
Authors:  陈维德;  谢小龙;  崔玉德;  段俐宏;  许振嘉
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