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Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2, KANAZAWA, JAPAN, MAY 27-31, 2001
Authors:  Niu ZC;  Wang XD;  Miao ZH;  Lan Q;  Kong YC;  Zhou DY;  Feng SL;  Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
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Molecular Beam Epitaxy  Ingaas Islands  Photolumineseence  Line-width  1.3 Mu-m  Inas/gaas Quantum Dots  Optical-properties  Cap Layer  Gaas  Luminescence  Strain  
Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 223, 期号: 3, 页码: 363-368
Authors:  Wang XD;  Niu ZC;  Feng SL;  Miao ZH;  Niu ZC,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Atomic Force Microscopy  Low Dimensional Structures  Optical Microscopy  Molecular Beam Epitaxy  Nanomaterials  Semiconducting Iii-v Materials  Laser Diodes  Temperature-dependence  m Photoluminescence  Ingaas Overgrowth  Gaas  Dots  Emission  Energy  Laser  
Formation of InAs quantum dots on low-temperature GaAs epi-layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 218, 期号: 2-4, 页码: 209-213
Authors:  Wang XD;  Niu ZC;  Wang H;  Feng SL;  Wang XD,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Quantum Dot  Low-temperature Gaas  As Precipitates  Annealing  Tem  Pl  Molecular-beam Epitaxy  Islands  Growth  Surfaces  
Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots 期刊论文
PHYSICAL REVIEW B, 2000, 卷号: 61, 期号: 8, 页码: 5530-5534
Authors:  Wang HL;  Yang FH;  Feng SL;  Zhu HJ;  Ning D;  Wang H;  Wang XD;  Feng SL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Electronic-structure  Carrier Relaxation  Energy-levels  Spectroscopy  
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 期刊论文
COMPOUND SEMICONDUCTORS 1999, 2000, 期号: 166, 页码: 251-256
Authors:  Wang H;  Wang HL;  Feng SL;  Zhu HJ;  Wang XD;  Guo ZS;  Ning D;  Wang H,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Electronic-structure  Carrier Relaxation  Energy-levels  Spectroscopy  
1.35 mu m photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)(1)/(GaAs)(1) monolayer deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 1-2, 页码: 16-22
Authors:  Wang XD;  Niu ZC;  Feng SL;  Miao ZH;  Wang XD,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Mbe  Afm  Pl  Quantum Islands  Ingaas/gaas  Strain  Quantum Dots  Room-temperature  Gaas  Luminescence  
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 会议论文
COMPOUND SEMICONDUCTORS 1999, (166), BERLIN, GERMANY, AUG 22-26, 1999
Authors:  Wang H;  Wang HL;  Feng SL;  Zhu HJ;  Wang XD;  Guo ZS;  Ning D;  Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(448Kb)  |  Favorite  |  View/Download:695/186  |  Submit date:2010/11/15
Electronic-structure  Carrier Relaxation  Energy-levels  Spectroscopy