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Growth and Characterization of InSb Thin Films on GaAs(001) without Any Buffer Layers by MBE 期刊论文
CHIN. PHYS. LETT., 2017, 卷号: 34, 期号: 7, 页码: 076105
Authors:  Xiao-Meng Zhao;  Yang Zhang;  Li-Jie Cui;  Min Guan;  Bao-Qiang Wang;  Zhan-Ping Zhu;  Yi-Ping Zeng
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Molecular beam epitaxy growth of high electron mobility InAs AlSb deep 期刊论文
Journal of Applied Physics, 2013, 卷号: 114, 期号: 1, 页码: 013704
Authors:  Juan Wang, Guo-Wei Wang, Ying-Qiang Xu, Jun-Liang Xing, Wei Xiang, Bao Tang, Yan Zhu, Zheng-Wei Ren, Zhen-Hong He, Zhi-Chuan Niu
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High sensitivity Hall devices with AlSb InAs quantum well structures 期刊论文
Chinese Physics B, 2013, 卷号: 22, 期号: 5, 页码: 7106
Authors:  Zhang Yang, Zhang Yu-Wei, Wang Cheng-Yan, Guan Min, Cui Li-Jie, Li Yi-Yang, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping
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Defect of Te-doped GaSb layers grown by molecular beam epitaxy 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2012, 卷号: 31, 期号: 4, 页码: 298-301
Authors:  Chen Y (Chen Yan);  Deng AH (Deng Ai-Hong);  Tang B (Tang Bao);  Wang GW (Wang Guo-Wei);  Xu YQ (Xu Ying-Qiang);  Niu ZC (Niu Zhi-Chuan)
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A Single-Fundamental-Mode Photonic Crystal Vertical Cavity Surface Emitting Laser 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 2, 页码: Art. No. 024206
Authors:  Xie YY (Xie Yi-Yang);  Xu C (Xu Chen);  Kan Q (Kan Qiang);  Wang CX (Wang Chun-Xia);  Liu YM (Liu Ying-Ming);  Wang BQ (Wang Bao-Qiang);  Cheng HD (Cheng Hong-Da);  Shen GD (Shen Guang-Di);  Xie, YY, Beijing Univ Technol, Beijing Photoelect Technol Lab, Beijing 100124, Peoples R China. E-mail Address: yiyangxie@semi.ac.cn
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Output Power  Vcsels  Relief  
Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 7, 页码: Art. No. 077305
Authors:  Wang GW (Wang Guo-Wei);  Xu YQ (Xu Ying-Qiang);  Guo J (Guo Jie);  Tang B (Tang Bao);  Ren ZW (Ren Zheng-Wei);  He ZH (He Zhen-Hong);  Niu ZC (Niu Zhi-Chuan);  Wang, GW, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: wangguowei@semi.ac.cn
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Ir Detection Modules  Inas  
二维光子晶体对面发射激光器横模控制研究 期刊论文
红外与激光工程, 2010, 卷号: 39, 期号: 3, 页码: 460-463
Authors:  解意洋;  徐晨;  阚强;  王春霞;  王宝强;  刘英明;  陈弘达;  沈光地
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砷化镓衬底上的多层变形缓冲层的制作方法 专利
专利类型: 发明, 申请日期: 2008-06-04, 公开日期: 2009-06-04, 2009-06-11
Inventors:  高宏玲;  曾一平;  段瑞飞;  王宝强;  朱战平;  崔利杰
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铟砷/镓砷量子点的分子束外延生长方法 专利
专利类型: 发明, 申请日期: 2007-03-14, 公开日期: 2009-06-04, 2009-06-11
Inventors:  吴巨;  王宝强;  朱战平;  曾一平
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Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 8, 页码: 4955-4959
Authors:  Gao, HL (Gao Hong-Ling);  Li, DL (Li Dong-Lin);  Zhou, WZ (Zhou Wen-Zheng);  Shang, LY (Shang Li-Yan);  Wang, BQ (Wang Bao-Qiang);  Zhu, ZP (Zhu Zhan-Ping);  Zeng, YP (Zeng Yi-Ping);  Gao, HL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: hlgao@red.semi.ac.cn
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Channel Thickness