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Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis
Huang TM (Huang TianMao); Chen NF (Chen NuoFu); Zhang XW (Zhang XingWang); Bai YM (BaiYiMing); Yin ZG (Yin ZhiGang); Shi HW (Shi HuiWei); Zhang H (Zhang Han); Wang Y (Wang Yu); Wang YS (Wang YanShuo); Yang XL (Yang XiaoLi); Huang, TM, Chinese AcadSci, InstSemicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: tmhuang@semi.ac.cn
2010
Source PublicationSCIENCE CHINA-TECHNOLOGICAL SCIENCES
Volume53Issue:11Pages:3002-3005
AbstractA polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and alpha-Si layers were deposited by magnetron sputtering respectively and annealed at 480A degrees C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between gamma-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of gamma-Al2O3, which was formed at the early stage of annealing.
metadata_24国内
KeywordPolycrystalline Silicon Thin Film Aluminum Induced Crystallization (111) Preferred Orientation Induced Layer-exchange Amorphous-silicon Solar-cells Glass Si Orientation Model
Subject Area半导体材料
Funding OrganizationThis work was supported by the National Basic Research Program of China ("973" Project) (Grant No. 2010CB933803), the National Natural Science Foundation of China (Grant No. 2102042), and the Visiting Scholar Foundation of State Key Lab of Silicon Materials, Zhejiang University (Grant No. SKL 2009-12).
Indexed BySCI
Language英语
Date Available2010-11-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/13935
Collection中科院半导体材料科学重点实验室
Corresponding AuthorHuang, TM, Chinese AcadSci, InstSemicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: tmhuang@semi.ac.cn
Recommended Citation
GB/T 7714
Huang TM ,Chen NF ,Zhang XW ,et al. Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis[J]. SCIENCE CHINA-TECHNOLOGICAL SCIENCES,2010,53(11):3002-3005.
APA Huang TM .,Chen NF .,Zhang XW .,Bai YM .,Yin ZG .,...&Huang, TM, Chinese AcadSci, InstSemicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: tmhuang@semi.ac.cn.(2010).Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis.SCIENCE CHINA-TECHNOLOGICAL SCIENCES,53(11),3002-3005.
MLA Huang TM ,et al."Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis".SCIENCE CHINA-TECHNOLOGICAL SCIENCES 53.11(2010):3002-3005.
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