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无权访问的条目 学位论文
Authors:  吕晓庆
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Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 6521
Authors:  Wang, JM;  Xu, FJ;  Zhang, X;  An, W;  Li, XZ;  Song, J;  Ge, WK;  Tian, GS;  Lu, J;  Wang, XQ;  Tang, N;  Yang, ZJ;  Li, W;  Wang, WY;  Jin, P;  Chen, YH;  Shen, B
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Thermal annealing of colloidal monolayer at the air/water interface: a facile approach to transferrable colloidal masks with tunable interstice size for nanosphere lithography 期刊论文
JOURNAL OF MATERIALS CHEMISTRY, 2012, 卷号: 22, 期号: 42, 页码: 22678-22685
Authors:  Geng C (Geng, Chong);  Zheng L (Zheng, Lu);  Yu J (Yu, Jie);  Yan QF (Yan, Qingfeng);  Wei TB (Wei, Tongbo);  Wang XQ (Wang, Xiaoqing);  Shen DZ (Shen, Dezhong)
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Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: 245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D (reprint author), Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China, rzhang@nju.edu.cn
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Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd  
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: Article no.245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D, Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China. rzhang@nju.edu.cn
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Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd  
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 6, 页码: Art. No. 064202
Authors:  Wu J;  Lu XQ;  Jin P;  Meng XQ;  Wang ZG
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Light-emitting-diodes  Optical-properties  Tuning Range  Nm  Emission  Spectrum  Spectroscopy  
A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 018104
Authors:  Lu XQ;  Jin P;  Wang ZG;  Jin, P, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: pengjin@red.semi.ac.cn
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Quantum-dot  Tunable Laser  External Cavity  Broadband Tuning  Nm Tuning Range  Superluminescent Diodes  Light-source  Well Laser  Spectroscopy  Spectrum  
Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 8, 页码: Art. No. 083112
Authors:  Song YF (Song Yafeng);  Lu YW (Lu Yanwu);  Zhang BA (Zhang Biao);  Xu XQ (Xu Xiaoqing);  Wang J (Wang Jun);  Guo Y (Guo Yan);  Shi K (Shi Kai);  Li ZW (Li Zhiwei);  Liu XL (Liu Xianglin);  Yang SY (Yang Shaoyan);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo);  Song, YF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: songyafeng@semi.ac.cn
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Optical Phonon Energy  Inversion-layers  Transitions  Relaxation  Lasers  States  
Complex networks constructed from irrational number sequences 期刊论文
PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS, 2010, 卷号: 389, 期号: 13, 页码: 2654-2662
Authors:  Chen C (Chen Chen);  Lu JA (Lu Jun-an);  Wu XQ (Wu Xiaoqun);  Wu, XQ, Wuhan Univ, Sch Math & Stat, Wuhan 430072, Hubei, Peoples R China. 电子邮箱地址: wuxiaoqunjj@yahoo.com.cn
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Complex Network  Irrational Number Sequence  Topological Property  
超辐射发光二极管的应用 期刊论文
红外技术, 2010, 卷号: 32, 期号: 5, 页码: 297-303
Authors:  王佐才;  吕雪芹;  金鹏;  王占国
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