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Black Arsenic: A Layered Semiconductor with Extreme In-Plane Anisotropy 期刊论文
Advanced Materials, 2018, 卷号: 30, 期号: 30, 页码: 1800754
Authors:  Yabin Chen;   Chaoyu Chen;   Robert Kealhofer;   Huili Liu;   Zhiquan Yuan;   Lili Jiang;  Joonki Suh;   Joonsuk Park;   Changhyun Ko;   Hwan Sung Choe;   José Avila;   Mianzeng Zhong;  Zhongming Wei;   Jingbo Li;   Shushen Li;   Hongjun Gao;   Yunqi Liu;   James Analytis;  Qinglin Xia;   Mari
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Long-range-ordered Ag nanodot arrays grown on GaAs substrate using nanoporous alumina mask 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2013, 卷号: 16, 期号: 1, 页码: 160-164
Authors:  Liu, Wen;  Wang, Xiaodong;  Xu, Rui;  Wang, Xiaofeng;  Cheng, Kaifang;  Ma, Huili;  Yang, Fuhua
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在GaAs衬底上制备金属纳米颗粒的方法 专利
专利类型: 发明, 专利号: CN102433529A, 公开日期: 2012-09-07, 2012-05-02, 2012-09-07
Inventors:  刘雯;  王晓东;  程凯芳;  马慧丽;  王晓峰;  徐锐;  杨富华
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