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Stable 6%-efcient Sb 2 Se 3 solar cells with a ZnO bufer layer 期刊论文
NATURE ENERGY, 2018, 卷号: 2, 页码: 17046
Authors:  Liang Wang ;   Deng-Bing Li ;   Kanghua Li ;   Chao Chen ;   Hui-Xiong Deng ;   Liang Gao ;   Yang Zhao ;   Fan Jiang ;   Luying Li ;   Feng Huang ;   Yisu He ;   Haisheng Song ;   Guangda Niu ;   Jiang Tang
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Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire 期刊论文
Journal of the American Chemical Society, 2018, 卷号: 140, 期号: 38, 页码: 11935-11941
Authors:  Yue Qi;   Yunyu Wang;   Zhenqian Pang;   Zhipeng Dou;   Tongbo Wei;   Peng Gao;   Shishu Zhang;   Xiaozhi Xu;   Zhenghua Chang;   Bing Deng;   Shulin Chen;   Zhaolong Chen;   Haina Ci;   Ruoyu Wang;   Fuzhen Zhao;   Jianchang Yan;   Xiaoyan Yi;   Kaihui Liu;   Hailin Peng;   Zhi
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Stable 6%-e_cient Sb2Se3 solar cells with a ZnO bu_er layer 期刊论文
NATURE ENERGY, 2017, 卷号: 2, 页码: 17046
Authors:  LiangWang;  Deng-Bing Li;  Kanghua Li;  Chao Chen;  Hui-Xiong Deng;  Liang Gao;  Yang Zhao;  Fan Jiang;  Luying Li;  Feng Huang;  Yisu He;  Haisheng Song;  Guangda Niu;  Jiang Tang
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Stable interface structures of heterovalent semiconductor superlattices: The case of (GaSb)n(ZnTe)n 期刊论文
Computational Materials Science, 2015, 卷号: 98, 页码: 340-344
Authors:  Hui-Xiong Deng;  Bing Huang;  Su-Huai Wei
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The structural and magnetic properties of Fe/(Ga, Mn)As heterostructures 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 8, 页码: 083003
Authors:  Deng Jiajun, Chen Pei, Wang Wenjie, Hu Bing, Che Jiantao, Chen Lin, Wang Hailong and Zhao Jianhua
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Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer 期刊论文
IEEE International Conference on Group IV Photonics GFP, 2011, 卷号: 32, 期号: 11, 页码: 114007
Authors:  Li, Zhicong;  Li, Panpan;  Wang, Bing;  Li, Hongjian;  Liang, Meng;  Yao, Ran;  Li, Jing;  Deng, Yuanming;  Yi, Xiaoyan;  Wang, Guohong;  Li, Jinmin;  Li, Z.(lizc@semi.ac.cn)
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Diodes  Electrostatic Devices  Electrostatic Discharge  Gallium Alloys  Gallium Nitride  Light Emission  
Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 12, 页码: Art.No.127101
Authors:  Wang, WJ (Wang Wen-Jie);  Deng, JJ (Deng Jia-Jun);  Fu, XQ (Fu Xing-Qiu);  Hu, B (Hu Bing);  Ding, K (Ding Kun);  Wang, WJ, N China Elect Power Univ, Dept Math & Phys, Beijing 102206, Peoples R China. 电子邮箱地址: wwj2008@ncepu.edu.cn
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Temperature-dependence  
采用TEOS源PECVD生长氧化硅厚膜的方法 专利
专利类型: 发明, 申请日期: 2002-03-27, 公开日期: 2009-06-04, 2009-06-11
Inventors:  雷红兵;  王红杰;  胡雄伟;  邓晓清;  王启明
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采用TEOS和H_2O源PECVD方法生长氧化硅厚膜(英文) 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 5, 页码: 543
Authors:  雷红兵;  王红杰;  邓晓清;  杨沁清;  胡雄伟;  王启明;  廖左升;  杨基南
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非共振激发条件下微腔中激子自发辐射的时间分辨光谱 期刊论文
发光学报, 2000, 卷号: 21, 期号: 4, 页码: 299
Authors:  刘宝利;  徐仲英;  王炳新;  邓元明;  杨富华
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