SEMI OpenIR

Browse/Search Results:  1-7 of 7 Help

  Show only claimed items
Selected(0)Clear Items/Page:    Sort:
Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector 期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 卷号: 40, 期号: 1, 页码: 32-35
Authors:  Yan, Tingjing;  Chong, Ming;  Zhao, Degang;  Zhang, Shuang;  Chen, Lianghui;  Yan, T.(tingjing.yan@gmail.com)
Adobe PDF(328Kb)  |  Favorite  |  View/Download:931/310  |  Submit date:2012/06/14
Alloying  Fabrication  Gallium  Heterojunctions  Optoelectronic Devices  Pixels  
246nm p-i-n型背照AlGaN太阳盲紫外探测器的研制 期刊论文
红外与激光工程, 2011, 卷号: 40, 期号: 1, 页码: 32-35
Authors:  颜廷静;  种明;  赵德刚;  张爽;  陈良惠
Adobe PDF(249Kb)  |  Favorite  |  View/Download:1794/685  |  Submit date:2011/08/16
GaN基日盲型紫外探测器面阵及其制作方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-16, 2010-08-12
Inventors:  颜廷静;  苏艳梅;  王国东;  种 明
Adobe PDF(729Kb)  |  Favorite  |  View/Download:1080/280  |  Submit date:2010/08/12
Ni基电极淀积前后表面处理对p-GaN欧姆接触的影响 期刊论文
半导体光电, 2009, 卷号: 30, 期号: 4, 页码: 541-545
Authors:  林孟喆;  曹青;  颜廷静;  陈良惠
Adobe PDF(610Kb)  |  Favorite  |  View/Download:855/292  |  Submit date:2010/11/23
NiO removal of Ni/Au Ohmic contact to p-GaN after annealing 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 2, 页码: 101-104
Authors:  Lin Mengzhe;  Cao Qing;  Yan Tingjing;  Zhang Shuming;  Chen Lianghui
Adobe PDF(822Kb)  |  Favorite  |  View/Download:907/321  |  Submit date:2010/11/23
紫外-红外双波段探测器及其制作方法 专利
专利类型: 发明, 专利号: CN200910084157.6, 公开日期: 2011-08-31
Inventors:  颜廷静;  种明;  苏艳梅;  林孟喆;  王晓勇
Adobe PDF(508Kb)  |  Favorite  |  View/Download:1093/243  |  Submit date:2011/08/31
低阻p-GaN欧姆接触电极制备方法 专利
专利类型: 发明, 专利号: CN200910080069.9, 公开日期: 2011-08-31
Inventors:  林孟喆;  曹青;  颜庭静;  陈良惠
Adobe PDF(488Kb)  |  Favorite  |  View/Download:1026/209  |  Submit date:2011/08/31