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Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE, 2018, 卷号: 53, 期号: 24, 页码: 16439-16446
Authors:  Qi Wang ;   Guodong Yuan ;   Tongbo Wei ;   Zhiqiang Liu ;   Wenqiang Liu ;   Lu Zhang ;   Xuecheng Wei ;   Junxi Wang ;   Jinmin Li
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GaN基日盲型紫外探测器面阵及其制作方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-16, 2010-08-12
Inventors:  颜廷静;  苏艳梅;  王国东;  种 明
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