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Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates
Qi Wang ;   Guodong Yuan ;   Tongbo Wei ;   Zhiqiang Liu ;   Wenqiang Liu ;   Lu Zhang ;   Xuecheng Wei ;   Junxi Wang ;   Jinmin Li
2018
Source PublicationJOURNAL OF MATERIALS SCIENCE
Volume53Issue:24Pages:16439-16446
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29369
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Qi Wang ; Guodong Yuan ; Tongbo Wei ; Zhiqiang Liu ; Wenqiang Liu ; Lu Zhang ; Xuecheng Wei ; Junxi Wang ; Jinmin Li. Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates[J]. JOURNAL OF MATERIALS SCIENCE,2018,53(24):16439-16446.
APA Qi Wang ; Guodong Yuan ; Tongbo Wei ; Zhiqiang Liu ; Wenqiang Liu ; Lu Zhang ; Xuecheng Wei ; Junxi Wang ; Jinmin Li.(2018).Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates.JOURNAL OF MATERIALS SCIENCE,53(24),16439-16446.
MLA Qi Wang ; Guodong Yuan ; Tongbo Wei ; Zhiqiang Liu ; Wenqiang Liu ; Lu Zhang ; Xuecheng Wei ; Junxi Wang ; Jinmin Li."Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates".JOURNAL OF MATERIALS SCIENCE 53.24(2018):16439-16446.
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王琦Multicolored-light(1908KB)期刊论文作者接受稿限制开放CC BY-NC-SAApplication Full Text
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