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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Low-Temperature Performance of Accumulation-Mode p-Channel Wrap-Gated FinFETs
期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 卷号: 13, 期号: 2, 页码: 804-807
Authors:
Zhang, Yanbo
;
Du, Yandong
;
Chen, Yankun
;
Li, Xiaoming
;
Yang, Xiang
;
Han, Weihua
;
Yang, Fuhua
Adobe PDF(3099Kb)
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View/Download:809/197
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Submit date:2013/10/08
A Self-Aligned Process to Fabricate a Metal Electrode-Quantum Dot/Nanowire-Metal Electrode Structure with 100% Yield
期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 9, 页码: 098102
Authors:
Fu YC (Fu Ying-Chun)
;
Wang XF (Wang Xiao-Feng)
;
Fan ZC (Fan Zhong-Chao)
;
Yang X (Yang Xiang)
;
Bai YX (Bai Yun-Xia)
;
Zhang JY (Zhang Jia-Yong)
;
Ma HL (Ma Hui-Li)
;
Ji A (Ji An)
;
Yang FH (Yang Fu-Hua)
Adobe PDF(2007Kb)
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View/Download:818/274
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Submit date:2013/04/18
Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs
期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 9, 页码: 94001
Authors:
Zhang, Yanbo
;
Du, Yandong
;
Xiong, Ying
;
Yang, Xiang
;
Han, Weihua
;
Yang, Fuhua,
;
Han, W.(weihua@semi.ac.cn)
Adobe PDF(747Kb)
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View/Download:969/286
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Submit date:2012/06/14
Carrier Concentration
Electric Fields
Fins(Heat Exchange)
Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors
期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 卷号: 10, 期号: 11 Sp. Iss. SI, 页码: 7113-7116
Authors:
Zhang YB (Zhang Yanbo)
;
Xiong Y (Xiong Ying)
;
Yang XA (Yang Xiang)
;
Wang Y (Wang Ying)
;
Han WH (Han Weihua)
;
Yang FH (Yang Fuhua)
;
Han, WH, Chinese Acad Sci, Inst Semicond, Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R China.
Adobe PDF(852Kb)
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View/Download:1149/229
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Submit date:2010/11/30
Subthreshold Swing (Ss)
Silicon-on-insulator (Soi)
Nanowire
Wrap Gate
Side Gates
An efficient dose-compensation method for proximity effect correction
期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 8, 页码: 86001-1-86001-4
Authors:
Wang Ying
;
Han Weihua
;
Yang Xiang
;
Zhang Renping
;
Zhang Yang
;
Yang Fuhua
Adobe PDF(279Kb)
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View/Download:1095/219
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Submit date:2011/08/16
环形孔阵列结构的二维光子晶体的制作方法
专利
专利类型: 发明, 申请日期: 2009-07-01, 公开日期: 3999
Inventors:
王 颖
;
韩伟华
;
杨 香
;
张 杨
;
杨富华
Adobe PDF(400Kb)
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View/Download:935/257
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Submit date:2010/03/19
具有双量子点接触结构的硅基单电子器件及其制作方法
专利
专利类型: 发明, 申请日期: 2009-02-04, 公开日期: 2009-06-04, 2009-06-11
Inventors:
韩伟华
;
杨香
Adobe PDF(855Kb)
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View/Download:775/138
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Submit date:2009/06/11
围栅控制结构的硅基单电子晶体管及其制作方法
专利
专利类型: 发明, 申请日期: 2009-02-04, 公开日期: 2009-06-04, 2009-06-11
Inventors:
韩伟华
;
杨香
Adobe PDF(896Kb)
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View/Download:758/156
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Submit date:2009/06/11
SOI纳米结构晶体管的制备与研究
学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:
杨香
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View/Download:712/37
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Submit date:2009/04/13
一种具有侧栅结构的硅基单电子记忆存储器及其制作方法
专利
专利类型: 发明, 申请日期: 2008-05-07, 公开日期: 2009-06-04, 2009-06-11
Inventors:
韩伟华
;
杨香
;
吴南健
Adobe PDF(1822Kb)
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View/Download:835/118
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Submit date:2009/06/11