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Low-Temperature Performance of Accumulation-Mode p-Channel Wrap-Gated FinFETs 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 卷号: 13, 期号: 2, 页码: 804-807
Authors:  Zhang, Yanbo;  Du, Yandong;  Chen, Yankun;  Li, Xiaoming;  Yang, Xiang;  Han, Weihua;  Yang, Fuhua
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A Self-Aligned Process to Fabricate a Metal Electrode-Quantum Dot/Nanowire-Metal Electrode Structure with 100% Yield 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 9, 页码: 098102
Authors:  Fu YC (Fu Ying-Chun);  Wang XF (Wang Xiao-Feng);  Fan ZC (Fan Zhong-Chao);  Yang X (Yang Xiang);  Bai YX (Bai Yun-Xia);  Zhang JY (Zhang Jia-Yong);  Ma HL (Ma Hui-Li);  Ji A (Ji An);  Yang FH (Yang Fu-Hua)
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Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 9, 页码: 94001
Authors:  Zhang, Yanbo;  Du, Yandong;  Xiong, Ying;  Yang, Xiang;  Han, Weihua;  Yang, Fuhua,;  Han, W.(
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Carrier Concentration  Electric Fields  Fins(Heat Exchange)  
Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 卷号: 10, 期号: 11 Sp. Iss. SI, 页码: 7113-7116
Authors:  Zhang YB (Zhang Yanbo);  Xiong Y (Xiong Ying);  Yang XA (Yang Xiang);  Wang Y (Wang Ying);  Han WH (Han Weihua);  Yang FH (Yang Fuhua);  Han, WH, Chinese Acad Sci, Inst Semicond, Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R China.
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Subthreshold Swing (Ss)  Silicon-on-insulator (Soi)  Nanowire  Wrap Gate  Side Gates  
An efficient dose-compensation method for proximity effect correction 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 8, 页码: 86001-1-86001-4
Authors:  Wang Ying;  Han Weihua;  Yang Xiang;  Zhang Renping;  Zhang Yang;  Yang Fuhua
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环形孔阵列结构的二维光子晶体的制作方法 专利
专利类型: 发明, 申请日期: 2009-07-01, 公开日期: 3999
Inventors:  王 颖;  韩伟华;  杨 香;  张 杨;  杨富华 
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具有双量子点接触结构的硅基单电子器件及其制作方法 专利
专利类型: 发明, 申请日期: 2009-02-04, 公开日期: 2009-06-04, 2009-06-11
Inventors:  韩伟华;  杨香
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围栅控制结构的硅基单电子晶体管及其制作方法 专利
专利类型: 发明, 申请日期: 2009-02-04, 公开日期: 2009-06-04, 2009-06-11
Inventors:  韩伟华;  杨香
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SOI纳米结构晶体管的制备与研究 学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:  杨香
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一种具有侧栅结构的硅基单电子记忆存储器及其制作方法 专利
专利类型: 发明, 申请日期: 2008-05-07, 公开日期: 2009-06-04, 2009-06-11
Inventors:  韩伟华;  杨香;  吴南健
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