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Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
Authors:  Chen Z;  Chua SJ;  Yuan HR;  Liu XL;  Lu DC;  Han PD;  Wang ZG;  Chen Z Singapore MIT Alliance AMMNS E4-04-10NUS4 Engn Dr3 Singapore 117576 Singapore. 电子邮箱地址: smacz@nus.edu.sg
Adobe PDF(225Kb)  |  Favorite  |  View/Download:1126/329  |  Submit date:2010/10/29
Metalorganic Chemical Vapor Deposition  Semiconducting Iii-v Materials  Doped Al(x)Ga1-xn/gan Heterostructures  Carrier Confinement  Effect Transistors  Photoluminescence  Mobility  Heterojunction  Interface  Hfets  
Nitrogen vacancy scattering in GaN grown by metal-organic vapor phase epitaxy 期刊论文
SOLID-STATE ELECTRONICS, 2002, 卷号: 46, 期号: 12, 页码: 2069-2074
Authors:  Chen Z;  Yuan HR;  Lu DC;  Sun XH;  Wan SK;  Liu XL;  Han PD;  Wang XH;  Zhu QS;  Wang ZG;  Chen Z,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
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Nitrogen Vacancy Scattering  Gan  Mobility  Mocvd  N-type Gan  Nitride  Films  
Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
Authors:  Yuan HR;  Lu DC;  Liu XL;  Han PD;  Wang XH;  Wang D;  Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(302Kb)  |  Favorite  |  View/Download:1048/179  |  Submit date:2010/10/29
Algan/gan Heterostructures  In-doping  2deg  Electron Sheet Density  X-ray Diffraction  Etching  Chemical-vapor-deposition  Molecular-beam Epitaxy  Phase Epitaxy  Mobility  Growth  Films