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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研... [22]
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徐波 [22]
叶小玲 [9]
金鹏 [3]
李成明 [1]
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Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate
期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 31, 期号: 1, 页码: 43-47
Authors:
Cui CX
;
Chen YH
;
Jin P
;
Xu B
;
Ren YY
;
Zhao C
;
Wang ZG
;
Chen, YH, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
Adobe PDF(323Kb)
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View/Download:936/261
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Submit date:2010/04/11
Patterned Substrate
Gaas
Molecular Beam Epitaxy
Nucleation Positions
Assembled Quantum Dots
Molecular-beam Epitaxy
Ge Islands
Growth
Surface
Arrays
Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices
期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 6, 页码: Art.No.063114
Authors:
Lei W
;
Chen YH
;
Jin P
;
Ye XL
;
Wang YL
;
Xu B
;
Wang ZG
;
Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
Adobe PDF(271Kb)
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View/Download:1006/271
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Submit date:2010/04/11
Vertical Self-organization
Quantum Wires
Surface
Growth
Alloy
Inalas/inp(001)
Nanowires
Inp(001)
Islands
Arrays
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
Authors:
Ye XL
;
Chen YH
;
Xu B
;
Zeng YP
;
Wang ZG
;
Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
Adobe PDF(211Kb)
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View/Download:1057/258
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Submit date:2010/10/29
Short-period Superlattices
Raman-scattering
Quantum-wells
Growth
Roughness
Segregation
Alas/gaas
Alas
Gaas
Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots
期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 93, 期号: 11, 页码: 8898-8902
Authors:
He J
;
Zhang YC
;
Xu B
;
Wang ZG
;
He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(264Kb)
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View/Download:964/293
  |  
Submit date:2010/08/12
Scanning-tunneling-microscopy
Growth
Islands
Nm
Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 247, 期号: 1-2, 页码: 49-54
Authors:
He J
;
Zhang YC
;
Xu B
;
Wang ZG
;
He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(323Kb)
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View/Download:972/338
  |  
Submit date:2010/08/12
Photoluminescence
Molecular Beam Epitaxy
Nanomaterials
Semiconducting Iii-v Materials
Scanning-tunneling-microscopy
Growth
Inp
Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 240, 期号: 3-4, 页码: 395-400
Authors:
He J
;
Xu B
;
Wang ZG
;
Qu SC
;
Liu FQ
;
Zhu TW
;
Ye XL
;
Zhao FA
;
Meng XQ
;
He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(175Kb)
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View/Download:1103/309
  |  
Submit date:2010/08/12
Photoluminescence
Molecular Beam Epitaxy
Nanomaterials
Quantum Dots
Semiconducting Iii-v Materials
1.3 Mu-m
Temperature-dependence
Excited-states
Inxga1-xas
Growth
Lasers
Inp
Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer
期刊论文
JOURNAL OF APPLIED PHYSICS, 2002, 卷号: 92, 期号: 1, 页码: 511-514
Authors:
Zhang ZY
;
Xu B
;
Jin P
;
Meng XQ
;
Li CM
;
Ye XL
;
Wang ZG
;
Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(170Kb)
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View/Download:1076/286
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Submit date:2010/08/12
Molecular-beam Epitaxy
1.3 Mu-m
Temperature-dependence
Growth
Gaas
Lasers
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:
Liu HY
;
Xu B
;
Ding D
;
Chen YH
;
Zhang JF
;
Wu J
;
Wang ZG
;
Liu HY Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(222Kb)
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View/Download:957/319
  |  
Submit date:2010/11/15
Low Dimensional Structures
Molecular Beam Epitaxy
Nanomaterials
Inas Islands
Gaas
Growth
Gaas(100)
Thickness
Density
Optical properties of InGaAs quantum dots formed on InAlAs wetting layer
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 224, 期号: 1-2, 页码: 41-46
Authors:
Zhang YC
;
Huang CJ
;
Xu B
;
Ye XL
;
Ding D
;
Wang JZ
;
Li YF
;
Liu F
;
Wang ZG
;
Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(187Kb)
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View/Download:1004/292
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Submit date:2010/08/12
Nanostructures
Molecular Beam Epitaxy
Semiconducting Iii-v Materials
Electron-phonon Interactions
Temperature-dependence
Semiconductor Nanocrystals
Carrier Transfer
Inas
Gaas
Lasers
Islands
Growth
Gain
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 1005-1009
Authors:
Liu HY
;
Xu B
;
Ding D
;
Chen YH
;
Zhang JF
;
Wu J
;
Wang ZG
;
Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(222Kb)
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  |  
View/Download:946/275
  |  
Submit date:2010/08/12
Low Dimensional Structures
Molecular Beam Epitaxy
Nanomaterials
Inas Islands
Gaas
Growth
Gaas(100)
Thickness
Density