Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

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	Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
	Liu HY; Xu B; Ding D; Chen YH; Zhang JF; Wu J; Wang ZG; Liu HY Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
	2001
会议名称	11th International Conference on Molecular Beam Epitaxy (MBE-XI)
会议录名称	JOURNAL OF CRYSTAL GROWTH, 227
页码	1005-1009
会议日期	SEP 11-15, 2000
会议地点	BEIJING, PEOPLES R CHINA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	The size and shape Evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0-ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs(1 0 0) substrate. Based on comparisons with the evolution of InAs islands on single layer samples at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML deposition have been observed on the second InAs layer. The further cross-sectional transmission electron microscopy measurement indicates the larger InAs QDs: at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of InAs/GaAs QDs on the second layer will be presented. (C) 2001 Elsevier Science B.V. All lights reserved.
关键词	Low Dimensional Structures Molecular Beam Epitaxy Nanomaterials Inas Islands Gaas Growth Gaas(100) Thickness Density
学科领域	半导体材料
主办者	China Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14953
专题	中国科学院半导体研究所（2009年前）
通讯作者	Liu HY Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Liu HY,Xu B,Ding D,et al. Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2001:1005-1009.

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