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Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:  Zhou XL;  Chen YH;  Zhang HY;  Zhou GY;  Li TF;  Liu JQ;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Inas Islands  Mu-m  Escape  Gaas  Gaas(100)  Substrate  
Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 31, 期号: 1, 页码: 43-47
Authors:  Cui CX;  Chen YH;  Jin P;  Xu B;  Ren YY;  Zhao C;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
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Patterned Substrate  Gaas  Molecular Beam Epitaxy  Nucleation Positions  Assembled Quantum Dots  Molecular-beam Epitaxy  Ge Islands  Growth  Surface  Arrays  
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 卷号: 153, 期号: 7, 页码: G703-G706
Authors:  Sun J;  Jin P;  Zhao C;  Yu LK;  Ye XL;  Xu B;  Chen YH;  Wang ZG;  Sun, J, Lund Univ, SE-22100 Lund, Sweden. E-mail: albertjefferson@sohu.com
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Gaas  Spectroscopy  Parameters  Transport  Lasers  Energy  States  Hole  
Selective growth of InAs islands on patterned GaAs (100) substrate 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2006, 卷号: 39, 期号: 5, 页码: 446-453
Authors:  Cui CX;  Chen YH;  Ren YY;  Xu B;  Jin P;  Zhao C;  Wang ZG;  Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: cxcui@red.semi.ac.cn
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Patterned Substrate  Molecular Beam Epitaxy  Quantum Dots  Inas  Gaas  Ingaas  Assembled Quantum Dots  Molecular-beam Epitaxy  Fabrication  
Temperature dependence of surface quantum dots grown under frequent growth interruption 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 33, 期号: 1, 页码: 207-210
Authors:  Yu LK;  Xu B;  Wang ZG;  Chen YH;  Jin P;  Zhao C;  Sun J;  Ding F;  Hu LJ;  Yu, LK, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yulike@red.semi.ac.cn
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Growth Interruption  In Segregation  Surface Oxide  Molecular Beam Epitaxy  Quantum Dots  Molecular-beam Epitaxy  Gaas  Photoluminescence  Layer  Shape  Size  
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy 会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
Authors:  Ye XL;  Chen YH;  Xu B;  Zeng YP;  Wang ZG;  Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
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Short-period Superlattices  Raman-scattering  Quantum-wells  Growth  Roughness  Segregation  Alas/gaas  Alas  Gaas  
Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2002, 卷号: 92, 期号: 1, 页码: 511-514
Authors:  Zhang ZY;  Xu B;  Jin P;  Meng XQ;  Li CM;  Ye XL;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  1.3 Mu-m  Temperature-dependence  Growth  Gaas  Lasers  
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Liu HY;  Xu B;  Ding D;  Chen YH;  Zhang JF;  Wu J;  Wang ZG;  Liu HY Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Low Dimensional Structures  Molecular Beam Epitaxy  Nanomaterials  Inas Islands  Gaas  Growth  Gaas(100)  Thickness  Density  
Optical properties of InGaAs quantum dots formed on InAlAs wetting layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 224, 期号: 1-2, 页码: 41-46
Authors:  Zhang YC;  Huang CJ;  Xu B;  Ye XL;  Ding D;  Wang JZ;  Li YF;  Liu F;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Nanostructures  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Electron-phonon Interactions  Temperature-dependence  Semiconductor Nanocrystals  Carrier Transfer  Inas  Gaas  Lasers  Islands  Growth  Gain  
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 1005-1009
Authors:  Liu HY;  Xu B;  Ding D;  Chen YH;  Zhang JF;  Wu J;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(222Kb)  |  Favorite  |  View/Download：923/275  |  Submit date：2010/08/12
Low Dimensional Structures  Molecular Beam Epitaxy  Nanomaterials  Inas Islands  Gaas  Growth  Gaas(100)  Thickness  Density