×
验证码:
换一张
Forgotten Password?
Stay signed in
×
Log In
Chinese
|
English
中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
ALL
ORCID
Title
Creator
Subject Area
Keyword
Document Type
Source Publication
Indexed By
Publisher
Date Issued
Date Accessioned
Funding Project
MOST Discipline Catalogue
Study Hall
Image search
Paste the image URL
Home
Collections
Authors
DocType
Subjects
K-Map
News
Search in the results
Collection
中国科学院半导体研... [28]
中科院半导体材料科学... [1]
Authors
徐波 [29]
叶小玲 [12]
金鹏 [5]
周冠宇 [1]
张宏毅 [1]
李成明 [1]
More...
Document Type
Journal a... [24]
Conference... [4]
成果 [1]
Date Issued
2011 [1]
2006 [4]
2004 [1]
2002 [1]
2001 [3]
2000 [11]
More...
Language
英语 [28]
中文 [1]
Source Publication
JOURNAL O... [12]
JOURNAL OF... [4]
PHYSICA E-... [2]
CHINESE PH... [1]
EUROPEAN P... [1]
JOURNAL OF... [1]
More...
Funding Project
Indexed By
SCI [24]
CPCI-S [4]
Funding Organization
China Natl... [1]
IEEE Elect... [1]
Lab Semico... [1]
National N... [1]
×
Knowledge Map
SEMI OpenIR
Start a Submission
Submissions
Unclaimed
Claimed
Attach Fulltext
Bookmarks
QQ
Weibo
Feedback
(Note: the search results are based on claimed items)
Browse/Search Results:
1-10 of 29
Help
Filters
Author:徐波
First author
Selected(
0
)
Clear
Items/Page:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
Sort:
Select
Submit date Ascending
Submit date Descending
Title Ascending
Title Descending
Journal Impact Factor Ascending
Journal Impact Factor Descending
Issue Date Ascending
Issue Date Descending
Author Ascending
Author Descending
WOS Cited Times Ascending
WOS Cited Times Descending
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:
Zhou XL
;
Chen YH
;
Zhang HY
;
Zhou GY
;
Li TF
;
Liu JQ
;
Ye XL
;
Xu B
;
Wang ZG
;
Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
Adobe PDF(1941Kb)
  |  
Favorite
  |  
View/Download:1605/395
  |  
Submit date:2011/07/05
Inas Islands
Mu-m
Escape
Gaas
Gaas(100)
Substrate
Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate
期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 31, 期号: 1, 页码: 43-47
Authors:
Cui CX
;
Chen YH
;
Jin P
;
Xu B
;
Ren YY
;
Zhao C
;
Wang ZG
;
Chen, YH, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
Adobe PDF(323Kb)
  |  
Favorite
  |  
View/Download:936/261
  |  
Submit date:2010/04/11
Patterned Substrate
Gaas
Molecular Beam Epitaxy
Nucleation Positions
Assembled Quantum Dots
Molecular-beam Epitaxy
Ge Islands
Growth
Surface
Arrays
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer
期刊论文
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 卷号: 153, 期号: 7, 页码: G703-G706
Authors:
Sun J
;
Jin P
;
Zhao C
;
Yu LK
;
Ye XL
;
Xu B
;
Chen YH
;
Wang ZG
;
Sun, J, Lund Univ, SE-22100 Lund, Sweden. E-mail: albertjefferson@sohu.com
Adobe PDF(183Kb)
  |  
Favorite
  |  
View/Download:1253/444
  |  
Submit date:2010/04/11
Gaas
Spectroscopy
Parameters
Transport
Lasers
Energy
States
Hole
Selective growth of InAs islands on patterned GaAs (100) substrate
期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2006, 卷号: 39, 期号: 5, 页码: 446-453
Authors:
Cui CX
;
Chen YH
;
Ren YY
;
Xu B
;
Jin P
;
Zhao C
;
Wang ZG
;
Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: cxcui@red.semi.ac.cn
Adobe PDF(1702Kb)
  |  
Favorite
  |  
View/Download:989/230
  |  
Submit date:2010/04/11
Patterned Substrate
Molecular Beam Epitaxy
Quantum Dots
Inas
Gaas
Ingaas
Assembled Quantum Dots
Molecular-beam Epitaxy
Fabrication
Temperature dependence of surface quantum dots grown under frequent growth interruption
期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 33, 期号: 1, 页码: 207-210
Authors:
Yu LK
;
Xu B
;
Wang ZG
;
Chen YH
;
Jin P
;
Zhao C
;
Sun J
;
Ding F
;
Hu LJ
;
Yu, LK, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yulike@red.semi.ac.cn
Adobe PDF(164Kb)
  |  
Favorite
  |  
View/Download:1082/354
  |  
Submit date:2010/04/11
Growth Interruption
In Segregation
Surface Oxide
Molecular Beam Epitaxy
Quantum Dots
Molecular-beam Epitaxy
Gaas
Photoluminescence
Layer
Shape
Size
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
Authors:
Ye XL
;
Chen YH
;
Xu B
;
Zeng YP
;
Wang ZG
;
Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
Adobe PDF(211Kb)
  |  
Favorite
  |  
View/Download:1057/258
  |  
Submit date:2010/10/29
Short-period Superlattices
Raman-scattering
Quantum-wells
Growth
Roughness
Segregation
Alas/gaas
Alas
Gaas
Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer
期刊论文
JOURNAL OF APPLIED PHYSICS, 2002, 卷号: 92, 期号: 1, 页码: 511-514
Authors:
Zhang ZY
;
Xu B
;
Jin P
;
Meng XQ
;
Li CM
;
Ye XL
;
Wang ZG
;
Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(170Kb)
  |  
Favorite
  |  
View/Download:1076/286
  |  
Submit date:2010/08/12
Molecular-beam Epitaxy
1.3 Mu-m
Temperature-dependence
Growth
Gaas
Lasers
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:
Liu HY
;
Xu B
;
Ding D
;
Chen YH
;
Zhang JF
;
Wu J
;
Wang ZG
;
Liu HY Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(222Kb)
  |  
Favorite
  |  
View/Download:957/319
  |  
Submit date:2010/11/15
Low Dimensional Structures
Molecular Beam Epitaxy
Nanomaterials
Inas Islands
Gaas
Growth
Gaas(100)
Thickness
Density
Optical properties of InGaAs quantum dots formed on InAlAs wetting layer
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 224, 期号: 1-2, 页码: 41-46
Authors:
Zhang YC
;
Huang CJ
;
Xu B
;
Ye XL
;
Ding D
;
Wang JZ
;
Li YF
;
Liu F
;
Wang ZG
;
Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(187Kb)
  |  
Favorite
  |  
View/Download:1004/292
  |  
Submit date:2010/08/12
Nanostructures
Molecular Beam Epitaxy
Semiconducting Iii-v Materials
Electron-phonon Interactions
Temperature-dependence
Semiconductor Nanocrystals
Carrier Transfer
Inas
Gaas
Lasers
Islands
Growth
Gain
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 1005-1009
Authors:
Liu HY
;
Xu B
;
Ding D
;
Chen YH
;
Zhang JF
;
Wu J
;
Wang ZG
;
Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(222Kb)
  |  
Favorite
  |  
View/Download:946/275
  |  
Submit date:2010/08/12
Low Dimensional Structures
Molecular Beam Epitaxy
Nanomaterials
Inas Islands
Gaas
Growth
Gaas(100)
Thickness
Density