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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [9]
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赵德刚 [11]
江德生 [3]
张书明 [3]
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Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector
期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
Authors:
Deng Y
;
Zhao DG
;
Wu LL
;
Liu ZS
;
Zhu JJ
;
Jiang DS
;
Zhang SM
;
Liang JW
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
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Submit date:2011/07/05
Gan
Ultraviolet And Infrared Photodetector
Quantum Efficiency
Solar-blind
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 017307
Authors:
Wang LJ
;
Zhang SM
;
Zhu JH
;
Zhu JJ
;
Zhao DG
;
Liu ZS
;
Jiang DS
;
Wang YT
;
Yang H
;
Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: smzhang@red.semi.ac.cn
Adobe PDF(699Kb)
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View/Download:1431/361
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Submit date:2010/04/05
Gan
Light Emitting Diode
Surface Treatment
Leakage Current
Threading Dislocation Densities
Layers
Ni/au
Leds
A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector
期刊论文
ACTA PHYSICA SINICA, 2008, 卷号: 57, 期号: 4, 页码: 2548-2553
Authors:
Zhou M
;
Chang QY
;
Zhao DG
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.en
Adobe PDF(210Kb)
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View/Download:683/194
  |  
Submit date:2010/03/08
Gan
Space-charge-limited currents in GaN Schottky diodes
期刊论文
SOLID-STATE ELECTRONICS, 2005, 卷号: 49, 期号: 5, 页码: 847-852
Authors:
Shen XM
;
Zhao DG
;
Liu ZS
;
Hu ZF
;
Yang H
;
Liang JW
;
Shen, XM, Tongji Univ, Inst Semicond & Informat Technol, 1239 Siping Rd, Shanghai 200092, Peoples R China. 电子邮箱地址: xmshen@mail.tongji.edu.cn
Adobe PDF(914Kb)
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View/Download:786/112
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Submit date:2010/03/17
Gan
Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique
期刊论文
SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY, 2003, 卷号: 46, 期号: 4, 页码: 437-440
Authors:
Feng G
;
Zhu JJ
;
Shen XM
;
Zhang BS
;
Zhao DG
;
Wang YT
;
Yang H
;
Liang JW
;
Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(184Kb)
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View/Download:1122/441
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Submit date:2010/08/12
Gan
X-ray Diffraction
Thickness
Sapphire
Growth
Films
High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 354-358
Authors:
Feng G
;
Shen XM
;
Zhu JJ
;
Zhang BS
;
Zhao DG
;
Wang YT
;
Yang H
;
Liang JW
;
Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(102Kb)
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View/Download:1993/827
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Submit date:2010/08/12
X-ray Diffraction
Metalorganic Vapor Phase Epitaxy
Nitrides
Semiconducting Iii-v Materials
Buffer Layer
Gan
Growth
Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth
期刊论文
SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 2002, 卷号: 45, 期号: 11, 页码: 1461-1467
Authors:
Feng G
;
Zheng XH
;
Zhu JJ
;
Shen XM
;
Zhang BS
;
Zhao DG
;
Sun YP
;
Zhang ZH
;
Wang YT
;
Yang H
;
Liang JW
;
Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(225Kb)
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View/Download:950/290
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Submit date:2010/08/12
Gan
Epitaxial Lateral Overgrowth
Crystallographic Tilt
Double Crystal X-ray Diffraction
Films
Defects
Gaas
MOCVD growth of cubic GaN: Materials and devices
会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
Authors:
Yang H
;
Zhang SM
;
Xu DP
;
Li SF
;
Zhao DG
;
Fu Y
;
Sun YP
;
Feng ZH
;
Zheng LX
;
Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(380Kb)
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View/Download:1138/238
  |  
Submit date:2010/10/29
Mocvd
Gan
Ingan
Cubic
Led
Chemical-vapor-deposition
Molecular-beam Epitaxy
Gallium Nitride
Phase Epitaxy
Ingan Films
Electroluminescence
Zincblende
Wurtzite
Mbe
Effect of Si doping on cubic GaN films grown on GaAs(100)
期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 206, 期号: 1-2, 页码: 150-154
Authors:
Xu DP
;
Yang H
;
Li JB
;
Li SF
;
Wang YT
;
Zhao DG
;
Wu RH
;
Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(118Kb)
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View/Download:1009/284
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Submit date:2010/08/12
Gan
Cubic
Hexagonal
Photoluminescence
Doped Gan
Xrd
Silicon
Light-emitting Diodes
Semiconductors
Sapphire
Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE)
期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 203, 期号: 1-2, 页码: 40-44
Authors:
Xu DP
;
Yang H
;
Zhao DG
;
Li JB
;
Zheng LX
;
Wang YT
;
Li SF
;
Duan LH
;
Wu RH
;
Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(881Kb)
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View/Download:1084/279
  |  
Submit date:2010/08/12
Algan
Cubic
Hexagonal
Sem
Gaas
Movpe
Gan