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Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
Authors:  Deng Y;  Zhao DG;  Wu LL;  Liu ZS;  Zhu JJ;  Jiang DS;  Zhang SM;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
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Gan  Ultraviolet And Infrared Photodetector  Quantum Efficiency  Solar-blind  
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 017307
Authors:  Wang LJ;  Zhang SM;  Zhu JH;  Zhu JJ;  Zhao DG;  Liu ZS;  Jiang DS;  Wang YT;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: smzhang@red.semi.ac.cn
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Gan  Light Emitting Diode  Surface Treatment  Leakage Current  Threading Dislocation Densities  Layers  Ni/au  Leds  
A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector 期刊论文
ACTA PHYSICA SINICA, 2008, 卷号: 57, 期号: 4, 页码: 2548-2553
Authors:  Zhou M;  Chang QY;  Zhao DG;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.en
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Gan  
Space-charge-limited currents in GaN Schottky diodes 期刊论文
SOLID-STATE ELECTRONICS, 2005, 卷号: 49, 期号: 5, 页码: 847-852
Authors:  Shen XM;  Zhao DG;  Liu ZS;  Hu ZF;  Yang H;  Liang JW;  Shen, XM, Tongji Univ, Inst Semicond & Informat Technol, 1239 Siping Rd, Shanghai 200092, Peoples R China. 电子邮箱地址: xmshen@mail.tongji.edu.cn
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Gan  
Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique 期刊论文
SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY, 2003, 卷号: 46, 期号: 4, 页码: 437-440
Authors:  Feng G;  Zhu JJ;  Shen XM;  Zhang BS;  Zhao DG;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Gan  X-ray Diffraction  Thickness  Sapphire  Growth  Films  
High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 354-358
Authors:  Feng G;  Shen XM;  Zhu JJ;  Zhang BS;  Zhao DG;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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X-ray Diffraction  Metalorganic Vapor Phase Epitaxy  Nitrides  Semiconducting Iii-v Materials  Buffer Layer  Gan  Growth  
Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth 期刊论文
SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 2002, 卷号: 45, 期号: 11, 页码: 1461-1467
Authors:  Feng G;  Zheng XH;  Zhu JJ;  Shen XM;  Zhang BS;  Zhao DG;  Sun YP;  Zhang ZH;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Gan  Epitaxial Lateral Overgrowth  Crystallographic Tilt  Double Crystal X-ray Diffraction  Films  Defects  Gaas  
MOCVD growth of cubic GaN: Materials and devices 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
Authors:  Yang H;  Zhang SM;  Xu DP;  Li SF;  Zhao DG;  Fu Y;  Sun YP;  Feng ZH;  Zheng LX;  Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China.
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Mocvd  Gan  Ingan  Cubic  Led  Chemical-vapor-deposition  Molecular-beam Epitaxy  Gallium Nitride  Phase Epitaxy  Ingan Films  Electroluminescence  Zincblende  Wurtzite  Mbe  
Effect of Si doping on cubic GaN films grown on GaAs(100) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 206, 期号: 1-2, 页码: 150-154
Authors:  Xu DP;  Yang H;  Li JB;  Li SF;  Wang YT;  Zhao DG;  Wu RH;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
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Gan  Cubic  Hexagonal  Photoluminescence  Doped Gan  Xrd  Silicon  Light-emitting Diodes  Semiconductors  Sapphire  
Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 203, 期号: 1-2, 页码: 40-44
Authors:  Xu DP;  Yang H;  Zhao DG;  Li JB;  Zheng LX;  Wang YT;  Li SF;  Duan LH;  Wu RH;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
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Algan  Cubic  Hexagonal  Sem  Gaas  Movpe  Gan