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Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 9, 页码: Art. No. 096801
Authors:  Hu Q;  Wei TB;  Duan RF;  Yang JK;  Huo ZQ;  Lu TC;  Zeng YP;  Hu Q Sichuan Univ Minist Educ Dept Phys Chengdu 610064 Peoples R China. E-mail Address:;
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Vapor-phase Epitaxy  Dislocations  Substrate  Layer