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Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 249, 期号: 1-2, 页码: 72-77
Authors:  Li DB;  Dong X;  Huang JS;  Liu XL;  Xu ZY;  Wang XH;  Zhang Z;  Wang ZG;  Li DB,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(249Kb)  |  Favorite  |  View/Download:975/314  |  Submit date:2010/08/12
Nanostructures  Stretched Exponential  Time-resolved Photolummescence  Metalorganic Vapor Phase Epitaxy  Nitrides  Inalgan  Inxalyga1-x-yn Quaternary Alloys  Time-resolved Photoluminescence  Multiple-quantum Wells  Alingan/gan Heterostructures  Gan  Decay  Luminescence  Sapphire  Devices  Silicon  
Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 241, 期号: 3, 页码: 304-308
Authors:  Zhang ZY;  Xu B;  Jin P;  Meng XQ;  Li CM;  Ye XL;  Li DB;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(142Kb)  |  Favorite  |  View/Download:898/340  |  Submit date:2010/08/12
Atomic Force Microscopy  Low Dimensional Structures  Nanostructures  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Laser Diodes  Temperature-dependence  Threshold Current  Mu-m  Lasers