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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体... [116]
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赵德刚 [130]
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纳米折叠InGaN/GaN LED材料生长及器件特性
期刊论文
物理学报, 2011, 卷号: 60, 期号: 7, 页码: 076104-1-076104-4
Authors:
陈贵锋
;
谭小动
;
万尾甜
;
沈俊
;
郝秋艳
;
唐成春
;
朱建军
;
刘宗顺
;
赵德刚
;
张书明
Adobe PDF(762Kb)
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View/Download:1248/511
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Submit date:2012/07/17
246nm p-i-n型背照AlGaN太阳盲紫外探测器的研制
期刊论文
红外与激光工程, 2011, 卷号: 40, 期号: 1, 页码: 32-35
Authors:
颜廷静
;
种明
;
赵德刚
;
张爽
;
陈良惠
Adobe PDF(249Kb)
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View/Download:1913/685
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Submit date:2011/08/16
一种测量p-GaN载流子浓度的方法
期刊论文
物理学报, 2011, 卷号: 60, 期号: 3, 页码: 721-728
Authors:
周梅
;
赵德刚
Adobe PDF(1225Kb)
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View/Download:862/155
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Submit date:2011/08/16
Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:
Deng Y
;
Zhao DG
;
Le LC
;
Jiang DS
;
Wu LL
;
Zhu JJ
;
Wang H
;
Liu ZS
;
Zhang SM
;
Yang H
;
Liang JW
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
Adobe PDF(311Kb)
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View/Download:1709/520
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Submit date:2011/07/05
Nitride Materials
Crystal Growth
Composition Fluctuations
X-ray Diffraction
Layer
Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84339
Authors:
Zhu JH
;
Wang LJ
;
Zhang SM
;
Wang H
;
Zhao DG
;
Zhu JJ
;
Liu ZS
;
Jiang DS
;
Yang H
;
Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
Adobe PDF(1530Kb)
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View/Download:1594/524
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Submit date:2011/07/05
The investigation on carrier distribution in InGaN/GaN multiple quantum well layers
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.93117
Authors:
Zhu JH
;
Zhang SM
;
Wang H
;
Zhao DG
;
Zhu JJ
;
Liu ZS
;
Jiang DS
;
Qiu YX
;
Yang H
;
Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
Adobe PDF(1688Kb)
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View/Download:1610/448
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Submit date:2011/07/05
Diodes
Efficiency
氮化镓基多波段探测器及其制作方法
专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:
刘文宝
;
孙 苋
;
赵德刚
;
刘宗顺
;
张书明
;
朱建军
;
杨 辉
Adobe PDF(603Kb)
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View/Download:1272/279
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Submit date:2010/08/12
利用光辅助氧化湿法刻蚀Ⅲ族氮化物的方法
专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:
刘文宝
;
孙 苋
;
赵德刚
;
刘宗顺
;
张书明
;
朱建军
;
杨 辉
Adobe PDF(597Kb)
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View/Download:1199/271
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Submit date:2010/08/12
Ferromagnetic modification of GaN film by Cu+ ions implantation
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 卷号: 268, 期号: 2, 页码: 123-126
Authors:
Zhang B
;
Chen CC
;
Yang C
;
Wang JZ
;
Shi LQ
;
Cheng HS
;
Zhao DG
;
Zhang, B, Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China. E-mail Address: binzhang@fudan.edu.cn
Adobe PDF(673Kb)
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View/Download:1220/426
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Submit date:2010/04/22
Nonmagnetic Element Doped Semiconductor
Cu Ion implantatIon
Gan-based Dms
Pixe Analysis
Doped Zno
Mn
Cr
Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector
期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
Authors:
Deng Y
;
Zhao DG
;
Wu LL
;
Liu ZS
;
Zhu JJ
;
Jiang DS
;
Zhang SM
;
Liang JW
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
Adobe PDF(853Kb)
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View/Download:1247/230
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Submit date:2011/07/05
Gan
Ultraviolet And Infrared Photodetector
Quantum Efficiency
Solar-blind