SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-5 of 5 Help

Filters        
Selected(0)Clear Items/Page:    Sort:
Deep-ultraviolet stimulated emission from AlGaN/AlN multiple-quantum-wells on nano-patterned AlN/sapphire templates with reduced threshold power density 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: 723, 期号: 06, 页码: 001-200
Authors:  Xiang Chen;  Yun Zhang;  Jianchang Yan;  Yanan Guo;  Shuo Zhang;  Junxi Wang;  Jinmin Li
Adobe PDF(1605Kb)  |  Favorite  |  View/Download:60/2  |  Submit date:2018/11/30
InAlN薄膜MOCVD外延生长研究 期刊论文
半导体技术, 2011, 卷号: 36, 期号: 8, 页码: 609-613
Authors:  贠利君;  魏同波;  刘乃鑫;  闫建昌;  王军喜;  李晋闽
Adobe PDF(1029Kb)  |  Favorite  |  View/Download:1127/356  |  Submit date:2012/07/17
AlGaN基UV—LED的研究与进展 期刊论文
功能材料与器件学报, 2007, 卷号: 13, 期号: 1, 页码: 95-100
Authors:  魏同波;  王军喜;  闫建昌;  李晋闽
Adobe PDF(235Kb)  |  Favorite  |  View/Download:1526/704  |  Submit date:2010/11/23
适用于氮化物LED外延生长的纳米级图形衬底的制备方法 专利
专利类型: 发明, 专利号: CN201010263069.5, 公开日期: 2011-08-31
Inventors:  孙莉莉;  闫建昌;  王军喜;  刘乃鑫;  魏同波;  魏学成;  马平;  刘喆;  曾一平;  王国宏;  李晋闽
Adobe PDF(255Kb)  |  Favorite  |  View/Download:1240/298  |  Submit date:2011/08/31
一种增强LED出光效率的粗化方法 专利
专利类型: 发明, 专利号: CN201010263076.5, 公开日期: 2011-08-31
Inventors:  孙莉莉;  闫建昌;  王军喜;  刘乃鑫;  魏同波;  魏学成;  马平;  刘喆;  曾一平;  王国宏;  李晋闽
Adobe PDF(279Kb)  |  Favorite  |  View/Download:1241/300  |  Submit date:2011/08/31