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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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半导体材料科学中心 [1]
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Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 464-467, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:
Pan X (Pan Xu)
;
Wei M (Wei Meng)
;
Yang CB (Yang Cuibai)
;
Xiao HL (Xiao Hongling)
;
Wang CM (Wang Cuimei)
;
Wang XL (Wang Xiaoliang)
Adobe PDF(396Kb)
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View/Download:2580/831
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Submit date:2011/07/17
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
Authors:
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(217Kb)
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View/Download:1527/329
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Submit date:2010/03/09
Gas Sensors
Hemt Structures
Mobility
Temperature
Transistors
Growth
Mocvd
Layer
Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R
会议论文
ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
Authors:
Wang, XH
;
Wan, XL
;
Xiao, HL
;
Feng, C
;
Way, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
;
Wan, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(339Kb)
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View/Download:1354/523
  |  
Submit date:2010/03/09
Hydrogen Sensor
Algan/gan Heterostructure
Schottky Diode
Recent progresses of SOI-based photonic devices - art. no. 60201R
会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
Authors:
Yu JZ
;
Chen SW
;
Li ZY
;
Chen YY
;
Sun F
;
Li YT
;
Li YP
;
Liu JW
;
Yang D
;
Xia JS
;
Li CB
;
Wang QM
;
Yu, JZ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(442Kb)
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View/Download:1370/362
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Submit date:2010/03/29
Soi