中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共4条，第1-4条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
5Gb/s optical logic AND operations using by monolithically integrated photodiode and electroabsorption modulator 会议论文
Proceedings of SPIE-The International Society for Optical Engineering vol.7717, Brussels, BELGIUM, APR 13-15, 2010
作者:  Zhang YX;  Zhao LJ;  Niu B;  Pan JQ;  Wang W
Adobe PDF(1781Kb)  |  收藏  |  浏览/下载：1548/326  |  提交时间：2011/07/14
Fabrication and Investigation of High Efficiency Evanescently Coupled Uni-Traveling Carrier Photodiodes 会议论文
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), Singapore, SINGAPORE, DEC 08-11, 2008
作者:  Zhang YX;  Liao ZY;  Sun Y;  Chen WX;  Zhao LJ;  Zhu HL;  Wang W;  Zhang, YX, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(216Kb)  |  收藏  |  浏览/下载：1649/307  |  提交时间：2010/03/09
Optimization  
An Improved Selective Area Growth Method in Fabrication of Electroabsorption Modulated Laser 会议论文
AOE 2007 ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE, Shanghai, PEOPLES R CHINA, OCT 17-19, 2007
作者:  Wang H;  Zhu HL;  Cheng YB;  Chen D;  Zhang W;  Wang LS;  Zhang YX;  Sun Y;  Wang W;  Wang, H, CAS, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(328Kb)  |  收藏  |  浏览/下载：1241/276  |  提交时间：2010/03/09
Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Sun, GS;  Ning, J;  Zhang, YX;  Gao, X;  Wang, L;  Zhao, WS;  Zeng, YP;  Li, JM;  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(201Kb)  |  收藏  |  浏览/下载：1316/208  |  提交时间：2010/03/29
4h-sic  Lpcvd Homoepitaxial Growth  Thermal Oxidization  Mos Structures  Hot-wall Cvd