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高剂量注氮对注氧隔离硅材料埋氧层中正电荷密度的影响 期刊论文
物理学报, 2011, 卷号: 60, 期号: 5, 页码: 056104-1-056104-6
Authors:  唐海马;  郑中山;  张恩霞;  于芳;  李宁;  王宁娟;  李国花;  马红芝
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Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 5, 页码: Article no.56104
Authors:  Tang HM;  Zheng ZS;  Zhang EX;  Yu F;  Li N;  Wang NJ;  Li GH;  Ma HZ;  Zheng, ZS, Univ Jinan, Dept Phys, Jinan 250022, Peoples R China. zszheng513@163.com
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Separation By Oxygen Implantation  Buried Oxide  Nitrogen Implantation  Positive Charge Density  Radiation Hardness  Implanting Nitrogen  Ion-implantation  Improvement  Technology  Oxygen  Layer  
平台式FPGA中可重构存储器模块的设计 期刊论文
微计算机信息. 嵌入式与SOC, 2008, 卷号: 24, 期号: 2, 页码: 191-193
Authors:  段会福;  于芳;  陈陵都;  刘忠立
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隔离反馈式开关电源的稳定性分析 期刊论文
微计算机信息. 测控自动化, 2008, 卷号: 24, 期号: 10, 页码: 222-223
Authors:  高峰;  于芳
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一种功率MOSFET驱动电路 专利
专利类型: 发明, 申请日期: 2007-10-17, 公开日期: 2009-06-04, 2009-06-11
Inventors:  高峰;  李春寄;  刘忠立;  于芳
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一种幅度调制隔离反馈控制电路 专利
专利类型: 发明, 申请日期: 2007-10-17, 公开日期: 2009-06-04, 2009-06-11
Inventors:  高峰;  李春寄;  刘忠立;  于芳
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抗辐射128kb PDSOI静态随机存储器 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 7, 页码: 1139-1143
Authors:  赵凯;  刘忠立;  于芳;  高见头;  肖志强;  洪根深
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Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET 期刊论文
功能材料与器件学报, 2007, 卷号: 13, 期号: 5, 页码: 426-430
Authors:  WANG Ningjuan;  LI Ning;  LIU Zhongli;  ZHANG GuoQiang;  YU Fang;  Zheng Zhongshan;  LI Guohua
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双极晶体管瞬态辐射光电流分流补偿法及其实验研究 期刊论文
核电子学与探测技术, 2005, 卷号: 25, 期号: 5, 页码: 543-546
Authors:  尹雪松;  刘忠立;  李春寄;  于芳
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改性的薄SOS膜CMOS器件辐射加固特性 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 7, 页码: 1406-1411
Authors:  刘忠立;  李宁;  高见头;  于芳
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